Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy

2000 ◽  
Vol 87 (4) ◽  
pp. 1947-1950 ◽  
Author(s):  
Feng Lin ◽  
Da-wei Gong ◽  
Chi Sheng ◽  
Fang Lu ◽  
Xun Wang
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Admittance Spectroscopy ◽  
Thermal Stability Of

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template

2004 ◽  
Vol 95 (6) ◽  
pp. 3170-3174 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Thermal Stability Of

scholarly journals Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Room Temperature ◽  
Low Dose ◽  
Stability Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Annealing Conditions ◽  
Thermal Stability Of

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001)

2003 ◽  
Vol 426 (1-2) ◽  
pp. 186-190 ◽  
Author(s):  
Feng Zhao ◽  
I.W. Choi ◽  
Shu Yuan ◽  
C.Y. Liu ◽  
J. Jiang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Thermal Stability Of

Improved thermal stability of AlGaAs–GaAs quantum well heterostructures using a ‘‘blocking’’ Zn diffusion to reduce column‐III vacancies

1995 ◽  
Vol 67 (13) ◽  
pp. 1859-1861 ◽  
Author(s):  
M. R. Krames ◽  
A. D. Minervini ◽  
E. I. Chen ◽  
N. Holonyak ◽  
J. E. Baker
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Zn Diffusion ◽  
Thermal Stability Of

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

2016 ◽  
Vol 858 ◽  
pp. 357-360
Author(s):  
Naoya Iwamoto ◽  
Alexander Azarov ◽  
Takeshi Ohshima ◽  
Anne Marie M. Moe ◽  
Bengt Gunnar Svensson
Keyword(s):  
Thermal Stability ◽  
High Purity ◽  
Deep Level ◽  
Decisive Role ◽  
Treatment Temperature ◽  
Admittance Spectroscopy ◽  
Chemical Analyses ◽  
Deep Level Defect ◽  
P Type ◽  
Thermal Stability Of

Effects of high temperature treatments on the deep-level defects in high-purity semi-insulating substrates are studied by employing electrical and chemical analyses. Thermal admittance spectroscopy reveals the presence of a deep-level defect, labeled XMID, with a state near the middle of the bandgap, playing a decisive role to realize the semi-insulating characteristics. The concentration of the XMID level decreases with increasing treatment temperature from 1400 to 1700 °C, and consequently, the substrate becomes more conductive toward p-type due to residual boron impurities. The identity of XMID is yet to be known but the carbon vacancy is briefly discussed as a possible candidate.

XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers

2014 ◽  
Vol 597 ◽  
pp. 181-187 ◽  
Author(s):  
Wojciech Lisowski ◽  
Ewa Grzanka ◽  
Janusz W. Sobczak ◽  
Mirosław Krawczyk ◽  
Aleksander Jablonski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Composition ◽  
Quantum Well ◽  
Thermal Stability Of
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