scholarly journals Point defects and grain boundary effects on tensile strength of 3C-SiC studied by molecular dynamics simulations

2019 ◽  
Vol 51 (3) ◽  
pp. 769-775
Author(s):  
Yingying Li ◽  
Yan Li ◽  
Wei Xiao
Keyword(s):  
Molecular Dynamics ◽  
Tensile Strength ◽  
Grain Boundary ◽  
Molecular Dynamics Simulations ◽  
Point Defects ◽  
Boundary Effects ◽  
Grain Boundary Effects ◽  
Dynamics Simulations

scholarly journals Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
M. tang ◽  
L. colombo ◽  
T. Diaz De La Rubia
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Point Defects ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Diffusion Path ◽  
Binding Energies ◽  
Defect Clusters ◽  
Dynamics Simulations

AbstractTight-binding molecular dynamics (TBMD) simulations are performed (i) to evaluate the formation and binding energies of point defects and defect clusters, (ii) to compute the diffusivity of self-interstitial and vacancy in crystalline silicon, and (iii) to characterize the diffusion path and mechanism at the atomistic level. In addition, the interaction between individual defects and their clustering is investigated.

scholarly journals Grain Boundary Motion under Dynamic Loading: Mechanism and Large-Scale Molecular Dynamics Simulations

2013 ◽  
Vol 1 (4) ◽  
pp. 220-227 ◽  
Author(s):  
Christian Brandl ◽  
Timothy C. Germann ◽  
Alejandro G. Perez-Bergquist ◽  
Ellen K. Cerreta
Keyword(s):  
Molecular Dynamics ◽  
Grain Boundary ◽  
Molecular Dynamics Simulations ◽  
Dynamic Loading ◽  
Large Scale ◽  
Boundary Motion ◽  
Dynamics Simulations ◽  
Grain Boundary Motion
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