Simulations for dual-rail driven electro-optic modulators of BaTiO3 crystal thin-film waveguides

2013 ◽  
Vol 301-302 ◽  
pp. 152-158 ◽  
Author(s):  
DeGui Sun ◽  
Xiuhua Fu ◽  
Huilin Jiang
2013 ◽  
Vol 113 (18) ◽  
pp. 184502 ◽  
Author(s):  
DeGui Sun ◽  
Xiuhua Fu ◽  
Trevor J. Hall ◽  
Huilin Jiang

2019 ◽  
Vol 44 (17) ◽  
pp. 4215 ◽  
Author(s):  
Mengxi Luo ◽  
DeGui Sun ◽  
Na Sun ◽  
Yuan Hu ◽  
Kaiping Zhang ◽  
...  

2019 ◽  
Vol 3 (11) ◽  
pp. 125-134 ◽  
Author(s):  
De-Gui Sun ◽  
Xiuhua Fu ◽  
Zhifu Liu ◽  
Seng-Tiong Ho ◽  
Bruce Wessels

2014 ◽  
Vol 609-610 ◽  
pp. 201-207
Author(s):  
Jing Zhang ◽  
Xiu Hua Fu ◽  
Li Jun Guo ◽  
Jian Hong Zhou ◽  
Dong Mei Liu ◽  
...  

BaTiO3 crystal film has the very high electro-optic effect, so it has important research value for thin film waveguide electro-optic modulators. In this work, BPM software is used to simulate the single-mode condition of ridge waveguide at first, then BaTiO3 film waveguide structure is designed with suitable film thickness.BaTiO3 waveguide thin films are grown by pulsed laser deposition on single crystal MgO substrate. The BaTiO3 thin-film crystalline structures grown at different temperature sand different laser powers were analyzed by using X ray diffraction , which showed the BaTiO3 films have a priority crystallization direction and good crystallization quality at 750°C grown temperature. For the optimally-designed waveguide structures, the PECVD technique and ICP plasma etching method are employed to coat and etch Si3N4 films, respectively. Through the optimization of main process parameters, 60 sccm reaction gas flow and 150 nm/min etching speed are finally selected to create the ridge waveguides, and consequently, the surface roughness of Si3N4 film waveguide reaches 2.3 nm.


2020 ◽  
Vol 45 (3) ◽  
pp. 767
Author(s):  
Mengxi Luo ◽  
DeGui Sun ◽  
Na Sun ◽  
Yuan Hu ◽  
Kaiping Zhang ◽  
...  

1974 ◽  
Vol 112 (2) ◽  
pp. 231 ◽  
Author(s):  
E.M. Zolotov ◽  
V.A. Kiselev ◽  
V.A. Sychugov

2000 ◽  
Vol 76 (18) ◽  
pp. 2490-2492 ◽  
Author(s):  
P. A. Atanasov ◽  
R. I. Tomov ◽  
J. Perriére ◽  
R. W. Eason ◽  
N. Vainos ◽  
...  

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