Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

Ablation of single-crystalline cesium iodide by extreme ultraviolet capillary-discharge laser

Extreme ultraviolet (XUV) capillary-discharge lasers (CDLs) are a suitable source for the efficient, clean ablation of ionic crystals, which are obviously difficult to ablate with conventional, long-wavelength lasers. In the present study, a single crystal of cesium iodide (CsI) was irradiated by multiple, focused 1.5-ns pulses of 46.9-nm radiation delivered from a compact XUV-CDL device operated at either 2-Hz or 3-Hz repetition rates. The ablation rates were determined from the depth of the craters produced by the accumulation of laser pulses. Langmuir probes were used to diagnose the plasma plume produced by the focused XUV-CDL beam. Both the electron density and electron temperature were sufficiently high to confirm that ablation was the key process in the observed CsI removal. Moreover, a CsI thin film on MgO substrate was prepared by XUV pulsed laser deposition; a fraction of the film was detected by X-ray photoelectron spectroscopy.

Texture and magnetic anisotropy of YBa2Cu3O7-x film on MgO substrate

The texture and magnetic anisotropy of a YBa2Cu3O7-x (YBCO) film growth onto a MgO substrate are analyzed in order to understand the relation between them. X-ray diffraction shows the presence of the (00l) reflections from the YBCO layer with a grain’s fraction value 98%. Rocking Curves (RC) measurements reveal an out-of-plane texture with a full width at the half maximum of 0.81°, revealing a high uniaxial texture in the YBCO film. The temperature dependence of the susceptibility measurements obtained under many applied fields along Hext ||c-axis and Hext||ab-plane reveals strong relationship between the uniaxial texture and the magnetic anisotropy, confirming the high ordering of the CuO2 superconducting planes. In addition, the critical current density values are obtained from the hysteresis loops and compared to similar YBCO films with uniaxial and biaxial texture reported elsewhere.