Type II quantum wells on GaSb substrate designed for laser-based gas sensing applications in a broad range of mid infrared

2012 ◽  
Vol 34 (7) ◽  
pp. 1107-1111 ◽  
Author(s):  
M. Motyka ◽  
K. Ryczko ◽  
G. Sęk ◽  
F. Janiak ◽  
J. Misiewicz ◽  
...  
2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  

2009 ◽  
Vol 2 (12) ◽  
pp. 126505 ◽  
Author(s):  
Marcin Motyka ◽  
Grzegorz Sęk ◽  
Jan Misiewicz ◽  
Adam Bauer ◽  
Matthias Dallner ◽  
...  

Author(s):  
Markus-Christian Amann ◽  
Ganpath Kumar Veerabathran ◽  
Stephan Sprengel ◽  
Alexander Andrejew

2011 ◽  
Vol 19 (2) ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  

AbstractModulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.


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