Zeeman effect on resonant tunneling in spin-polarized Tomonaga–Luttinger liquid

2005 ◽  
Vol 359-361 ◽  
pp. 645-647 ◽  
Author(s):  
Kenji Kamide ◽  
Yuji Tsukada ◽  
Susumu Kurihara
Keyword(s):  
Resonant Tunneling ◽  
Zeeman Effect ◽  
Luttinger Liquid ◽  
Spin Polarized

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized

scholarly journals Experimental Evidence for Resonant Tunneling in a Luttinger Liquid

2000 ◽  
Vol 84 (8) ◽  
pp. 1764-1767 ◽  
Author(s):  
O. M. Auslaender ◽  
A. Yacoby ◽  
R. de Picciotto ◽  
K. W. Baldwin ◽  
L. N. Pfeiffer ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Resonant Tunneling ◽  
Luttinger Liquid

Theory of Electrically Controlled Resonant Tunneling Spin Devices

2004 ◽  
Vol 825 ◽  
Author(s):  
David Z.-Y. Ting ◽  
Xavier Cartoixà
Keyword(s):  
Resonant Tunneling ◽  
High Speed ◽  
Current Source ◽  
Spin Orbit ◽  
Speed Modulation ◽  
Spin Polarized ◽  
Structural Inversion ◽  
Inversion Asymmetry ◽  
Spin Devices ◽  
High Speed Modulation

AbstractWe report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling spin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity. The bi-directional spin pump induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling. The efficiency of resonant tunneling spin devices can be improved when the effects of structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) are combined properly, and incorporated into device design. The current spin polarizations of the proposed devices are electrically controllable, and potentially amenable to high-speed modulation. In principle, the electrically modulated spin-polarized current source could be integrated in optoelectronic devices for added functionality.

Sign in / Sign up

Export Citation Format

Share Document