Longitudinal and transversal resonant tunneling of interacting bosons in a two-dimensional Josephson junction

We unravel the out-of-equilibrium quantum dynamics of a few interacting bosonic clouds in a two-dimensional asymmetric double-well potential at the resonant tunneling scenario. At the single-particle level of resonant tunneling, particles tunnel under the barrier from, typically, the ground-state in the left well to an excited state in the right well, i.e., states of different shapes and properties are coupled when their one-particle energies coincide. In two spatial dimensions, two types of resonant tunneling processes are possible, to which we refer to as longitudinal and transversal resonant tunneling. Longitudinal resonant tunneling implies that the state in the right well is longitudinally-excited with respect to the state in the left well, whereas transversal resonant tunneling implies that the former is transversely-excited with respect to the latter. We show that interaction between bosons makes resonant tunneling phenomena in two spatial dimensions profoundly rich, and analyze these phenomena in terms of the loss of coherence of the junction and development of fragmentation, and coupling between transverse and longitudinal degrees-of-freedom and excitations. To this end, a detailed analysis of the tunneling dynamics is performed by exploring the time evolution of a few physical quantities, namely, the survival probability, occupation numbers of the reduced one-particle density matrix, and the many-particle position, momentum, and angular-momentum variances. To accurately calculate these physical quantities from the time-dependent many-boson wavefunction, we apply a well-established many-body method, the multiconfigurational time-dependent Hartree for bosons (MCTDHB), which incorporates quantum correlations exhaustively. By comparing the survival probabilities and variances at the mean-field and many-body levels of theory and investigating the development of fragmentation, we identify the detailed mechanisms of many-body longitudinal and transversal resonant tunneling in two dimensional asymmetric double-wells. In particular, we find that the position and momentum variances along the transversal direction are almost negligible at the longitudinal resonant tunneling, whereas they are substantial at the transversal resonant tunneling which is caused by the combination of the density and breathing mode oscillations. We show that the width of the interparticle interaction potential does not affect the qualitative physics of resonant tunneling dynamics, both at the mean-field and many-body levels. In general, we characterize the impact of the transversal and longitudinal degrees-of-freedom in the many-boson tunneling dynamics at the resonant tunneling scenarios.

Photo- and exchange-field controlled line-type resonant peaks and enhanced spin and valley polarizations in a magnetic WSe2 junction

Existing resonant tunneling modes in the shape of line-type resonances can improve the transport properties of the junction. Motivated by the unique structural properties of monolayer WSe2 e.g. significant spin-orbit coupling (SOC) and large direct bandgap, the transport properties of a normal/ferromagnetic/normal (NFN) WSe2 junction with large incident angles in the presence of exchange field (h), off-resonance light (∆Ω) and gate voltage (U) is studied. In a certain interval of U, the transmission shows a gap with optically controllable width, while outside it, the spin and valley resolved transmissions have an oscillatory behavior with respect to U. By applying ∆Ω (h), an optically (electrically) switchable perfect spin and valley polarizations at all angles of incidence have been found. For large incident angles, the transmission resonances change to spin-valley-dependent separated ideal line-type resonant peaks with respect to U, resulting in switchable perfect spin and valley polarizations, simultaneously. Furthermore, even in the absence of U, applying h or ∆Ω at large incident angles can give some spin-valley dependent ideal transmission peaks, making h or ∆Ω a transmission valve capable of giving a switchable fully spinvalley filtering effect. These findings suggest some alternate methods for providing high-efficiency spin and valley filtering devices based on WSe2.

Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

Using numerical simulation, a search is carried out for designs of asymmetric barrier layers (ABLs) for a laser diode having GaAs waveguide and emitting at the wavelength λ = 980 nm. A pair of ABLs, adjoining the active region on both sides, blocks undesired charge carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking electrons and holes, respectively, are proposed that make it possible to reduce the parasitic recombination current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based on three identical AlInAs barriers is also proposed. The GaAsP spacers separating these barriers from each other have different thicknesses. Due to this, its own set of quasi-bound (resonant) states is formed in each spacer that is different from the neighbor spacer set of states. As a result of this, the resonant tunneling channels are blocked: the parasitic electron flow is reduced by several tens of times in comparison with the case of spacers of equal thickness.

Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well

We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I-V characteristics. Results show that an enhancement in the peak current (Ip ) can be obtained by reducing the well width (Ww ) or barrier width (Wb ). As Ww decreases, Ip shifts to a higher peak voltage (Vp ), while there is almost no change in Vp with decreasing Wb . It is gratifying to note that there is an enhancement in Ip by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene, having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.