One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect

2013 ◽  
Vol 410 ◽  
pp. 126-130 ◽  
Author(s):  
Re. Betancourt-Riera ◽  
Ri. Betancourt-Riera ◽  
J.M. Nieto Jalil ◽  
R. Riera
1999 ◽  
Vol 13 (17) ◽  
pp. 2275-2283 ◽  
Author(s):  
HYUN C. LEE

The resonant Raman scattering of a quantum wire in a strong magnetic field is studied, focused on the effect of long range Coulomb interaction and the spin–charge separation. The energy–momentum dispersions of charge and spin excitation obtained from Raman cross-section show the characteristc cross-over behaviour induced by inter-edge Coulomb interaction. The "SPE" peak near resonance in polarized spectra becomes broad due to the momentum dependence of charge velocity. The broad peak in the depolarized spectra is shown to originate from the disparity between charge and spin excitation velocity.


2007 ◽  
Vol 21 (17) ◽  
pp. 2989-3000
Author(s):  
XIANG-FU ZHAO ◽  
CUI-HONG LIU

The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.


1991 ◽  
Vol 44 (23) ◽  
pp. 12815-12821 ◽  
Author(s):  
C. Trallero-Giner ◽  
F. Iikawa ◽  
M. Cardona

Sign in / Sign up

Export Citation Format

Share Document