Photoluminescence of n-doped double quantum well—electron subbands under influence of in-plane magnetic fields

2006 ◽  
Vol 34 (1-2) ◽  
pp. 284-287 ◽  
Author(s):  
M. Orlita ◽  
M. Byszewski ◽  
G.H. Döhler ◽  
M. Grill ◽  
P. Hlídek ◽  
...  
2007 ◽  
Author(s):  
M. V. Yakunin ◽  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
S. M. Podgornyh ◽  
N. G. Shelushinina ◽  
...  

1996 ◽  
Vol 361-362 ◽  
pp. 138-141 ◽  
Author(s):  
J.A. Simmons ◽  
N.E. Harff ◽  
T.M. Eiles ◽  
S.K. Lyo ◽  
J.F. Klem

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1399-1403
Author(s):  
M. V. YAKUNIN ◽  
Yu. G. ARAPOV ◽  
V. N. NEVEROV ◽  
S. M. PODGORNYH ◽  
N. G. SHELUSHININA ◽  
...  

Precise scanning of the (B⊥,B‖)-plane while measuring magnetoresistance of the n - InGaAs/GaAs double quantum well (DQW) reveals a number of peculiarities connected with intricate DQW energy spectrum, which are analyzed on the basis of quasiclassical calculations. Magnetic breakdown effects are also considered. Peaks due to the latter mechanism reveal spin-splittings (in spite of lower mobilities as compared with the traditional n - GaAs/AlGaAs DQWs) corresponding to an enhanced effective Lande g-factor.


2010 ◽  
Vol 59 (9) ◽  
pp. 6642
Author(s):  
Jiang Wen-Long ◽  
Meng Zhao-Hui ◽  
Cong Lin ◽  
Wang Jin ◽  
Wang Li-Zhong ◽  
...  

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