Capacitance–voltage characteristics and switching time of double barrier resonant tunneling diode fabricated with epi-Si and γ-Al2O3

2007 ◽  
Vol 36 (1) ◽  
pp. 123-127 ◽  
Author(s):  
Halima Khatun Mst ◽  
Mohammad Shahjahan ◽  
Kazuaki Sawada ◽  
Makoto Ishida
Keyword(s):  
Resonant Tunneling ◽  
Switching Time ◽  
Resonant Tunneling Diode ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Capacitance Voltage ◽  
Double Barrier Resonant Tunneling

Dominant photogenerated valley current in a double‐barrier resonant‐tunneling diode

1994 ◽  
Vol 65 (23) ◽  
pp. 2999-3001 ◽  
Author(s):  
H. S. Li ◽  
L. P. Chen ◽  
Y. W. Chen ◽  
K. L. Wang ◽  
D. S. Pan ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling

Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode

2000 ◽  
Vol 47 (4) ◽  
pp. 895-897
Author(s):  
Yan-Kuin Su ◽  
Jia-Rong Chang ◽  
Yan-Ten Lu ◽  
Chuing-Liang Lin ◽  
Kuo-Ming Wu
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling

scholarly journals Realization of a Double-Barrier Resonant Tunneling Diode for Cavity Polaritons

2013 ◽  
Vol 110 (23) ◽  
Author(s):  
H. S. Nguyen ◽  
D. Vishnevsky ◽  
C. Sturm ◽  
D. Tanese ◽  
D. Solnyshkov ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling
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