Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well

2010 ◽  
Vol 43 (1) ◽  
pp. 17-21
Author(s):  
L.L. Li ◽  
X.H. Zheng ◽  
W. Xu
Keyword(s):  
Optical Absorption ◽  
Quantum Well ◽  
Type Ii ◽  
Broken Gap

Two-Colour Mid-Infrared Optical Absorption under Electric Field in an InAs/GaSb-Based Type II and Broken-Gap Quantum Well

2011 ◽  
Vol 130-134 ◽  
pp. 4122-4125
Author(s):  
X.F. Wei ◽  
J.F. Ruan ◽  
C.G. Xie ◽  
H. Yuan ◽  
J. Song
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Type Ii ◽  
Mid Infrared ◽  
Material Layer ◽  
Broken Gap ◽  
Small Overlap

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

scholarly journals Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

2008 ◽  
Vol 40 (5) ◽  
pp. 1069-1071 ◽  
Author(s):  
X.F. Wei ◽  
W. Xu ◽  
J. Zhang ◽  
Z. Zeng ◽  
C. Zhang
Keyword(s):  
Quantum Well ◽  
Infrared Absorption ◽  
Type Ii ◽  
Broken Gap

Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

2009 ◽  
Vol 40 (4-5) ◽  
pp. 809-811
Author(s):  
W. Xu ◽  
Z. Zeng ◽  
A.R. Wright ◽  
C. Zhang ◽  
J. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Broken Gap

Photocurrent induced by intersubband transition in a type II and broken-gap quantum well system

2007 ◽  
Vol 4 (2) ◽  
pp. 544-546
Author(s):  
X. F. Wei ◽  
W. Xu ◽  
Z. Zeng ◽  
C. Zhang
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Intersubband Transition ◽  
Broken Gap

Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

2008 ◽  
Vol 40 (5) ◽  
pp. 1536-1538
Author(s):  
W. Xu ◽  
P.A. Folkes ◽  
G. Gumbs ◽  
Z. Zeng ◽  
C. Zhang
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Broken Gap ◽  
Subband Structure
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