Tight-binding model for the electronic structures of SiC and BN nanoribbons

2010 ◽  
Vol 43 (1) ◽  
pp. 440-445 ◽  
Author(s):  
Kun Zhao ◽  
Mingwen Zhao ◽  
Zhenhai Wang ◽  
Yingcai Fan
1993 ◽  
Vol 325 ◽  
Author(s):  
J.H. Xu ◽  
E.G. Wang ◽  
C.S. Ting ◽  
W.P. Su

AbstractThe band structures of three group-V semimetals As, Sb, and Bi with rhombohedral A7 symmetry are studied using a second-neighbor tight-binding model including spin-orbit interaction with an sp3s* basis. Then the bulk tight-binding parameters are used to investigate the electronic properties of semimetal-semiconductor superlattices made of alternating (111) layers of Sb and GaSb or AlSb. It is found that the band gap can be adjustable depending primarily on the thickness of the Sb layers. An interface state is observed in the region of the gap.


1990 ◽  
Vol 206 ◽  
Author(s):  
Tapio T. Rantala ◽  
Mark I. Stockman ◽  
Daniel A. Jelski ◽  
Thomas F. George

ABSTRACTElectronic contributions to the optical (hyper)polarizabilities of small silicon clusters are theoretically determined. Geometries and the electronic structures of the clusters are established using the tight-binding model. The nonlinear polarizabilities are found to depend primarily on the symmetry of the cluster and prove to be high for the low-symmetry clusters. Possible experiments and applications are discussed.


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015127
Author(s):  
Qiuyuan Chen ◽  
Jiawei Chang ◽  
Lin Ma ◽  
Chenghan Li ◽  
Liangfei Duan ◽  
...  

2021 ◽  
Vol 154 (16) ◽  
pp. 164115
Author(s):  
Rebecca K. Lindsey ◽  
Sorin Bastea ◽  
Nir Goldman ◽  
Laurence E. Fried

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

Sign in / Sign up

Export Citation Format

Share Document