A Tight-Binding Theory of the Electronic Structures for Rhombohedral Semimetals and Sb/GaSb, Sb/AlSb Superlattices

1993 ◽  
Vol 325 ◽  
Author(s):  
J.H. Xu ◽  
E.G. Wang ◽  
C.S. Ting ◽  
W.P. Su
Keyword(s):  
Electronic Structures ◽  
Tight Binding ◽  
Interface State ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Theory ◽  
Binding Parameters ◽  
Binding Model ◽  
Group V

AbstractThe band structures of three group-V semimetals As, Sb, and Bi with rhombohedral A7 symmetry are studied using a second-neighbor tight-binding model including spin-orbit interaction with an sp3s* basis. Then the bulk tight-binding parameters are used to investigate the electronic properties of semimetal-semiconductor superlattices made of alternating (111) layers of Sb and GaSb or AlSb. It is found that the band gap can be adjustable depending primarily on the thickness of the Sb layers. An interface state is observed in the region of the gap.

HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE

2003 ◽  
Vol 02 (06) ◽  
pp. 411-417 ◽  
Author(s):  
M. O. NESTOKLON
Keyword(s):  
Tight Binding ◽  
Type Ii ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Parameters ◽  
Binding Model ◽  
Orbit Splitting ◽  
Semiconductor Interface ◽  
Spin Orbit Splitting ◽  
Tight Binding Method

A theory of Tamm-like hole states at type II heterointerface has been developed for zink-blende semiconductors. The consideration has been carried out in the microscopic tight-binding model with allowance made for the spin-orbit splitting of the valence band. It has been demonstrated that the tight-binding method describes Tamm-like hole states at type II semiconductor interface. Localization energy dependence on interface tight-binding parameters has been analyzed.

scholarly journals Transport of Topological Edge States in 2D Zigzag Edge Tungsten Ditelluride Nanoribbon

2021 ◽  
Author(s):  
Joy Sharma ◽  
Nishat Mahzabin Helaly ◽  
Mahbub Alam
Keyword(s):  
Band Structure ◽  
Potential Barrier ◽  
Tight Binding ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Edge States ◽  
Zigzag Edge ◽  
Binding Model ◽  
Greens Function

Abstract In this paper, we have investigated the transport of topological edge states in 2D Zigzag edge Tungsten Ditelluride Nanoribbon (ZTDNR).We have found that zigzag edge nanoribbon (NR) of Tungsten Ditelluride develops topological edge states in the presence of intrinsic spin orbit interaction (SOC). We have used three band tight binding model for the electrons of dz2 , dxy, and dx2 - y2 orbitals with SOC for calculating band structure of NR and Non Equilibrium Greens Function (NEGF) formalism for transport in the NR. We have investigated transport in a pristine device, transport in the presence of a finite potential barrier, transport with constriction within the device and transport with edge imperfections.

scholarly journals Environment-Dependent Tight-Binding Potential Model

1997 ◽  
Vol 491 ◽  
Author(s):  
C. Z. Wang ◽  
B. C. Pan ◽  
M. S. Tang ◽  
H. Haas ◽  
M. Sígalas ◽  
...  
Keyword(s):  
Potential Model ◽  
Tight Binding ◽  
Binding Potential ◽  
Tight Binding Model ◽  
Binding Parameters ◽  
Binding Model ◽  
Structures And Properties ◽  
Metallic Systems

ABSTRACTWe have developed a tight-binding model which goes beyond the traditional two-center approximation and allows the tight-binding parameters to scale according to the bonding environment. Our studies show that this environment-dependent tight-binding model improves remarkably the accuracy and transferability of the potential to describe the structures and properties of higher coordinated metallic systems in addition to those of low coordinated covalent systems.

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