scholarly journals Rapid scan electron paramagnetic resonance at 1.0 GHz of defect centers in γ-irradiated organic solids

2016 ◽  
Vol 85 ◽  
pp. 57-63 ◽  
Author(s):  
Yilin Shi ◽  
George A. Rinard ◽  
Richard W. Quine ◽  
Sandra S. Eaton ◽  
Gareth R. Eaton
2014 ◽  
Vol 242 ◽  
pp. 162-168 ◽  
Author(s):  
Joshua R. Biller ◽  
Mark Tseitlin ◽  
Richard W. Quine ◽  
George A. Rinard ◽  
Hilary A. Weismiller ◽  
...  

2016 ◽  
Vol 172 (1-3) ◽  
pp. 133-138 ◽  
Author(s):  
Hanan Elajaili ◽  
Joseph McPeak ◽  
Alexander Romanyukha ◽  
Priyanka Aggarwal ◽  
Sandra S. Eaton ◽  
...  

Author(s):  
Joshua R. Biller ◽  
Deborah G. Mitchell ◽  
Mark Tseytlin ◽  
Hanan Elajaili ◽  
George A. Rinard ◽  
...  

ChemPhysChem ◽  
2020 ◽  
Vol 21 (22) ◽  
pp. 2564-2570
Author(s):  
Joseph E. McPeak ◽  
Peter Höfer ◽  
Sylwia Kacprzak ◽  
Patrick Carl ◽  
Ralph Weber ◽  
...  

2017 ◽  
Vol 276 ◽  
pp. 31-36 ◽  
Author(s):  
Boris Epel ◽  
Subramanian V. Sundramoorthy ◽  
Martyna Krzykawska-Serda ◽  
Matthew C. Maggio ◽  
Mark Tseytlin ◽  
...  

1985 ◽  
Vol 61 ◽  
Author(s):  
Robert N. Schwartz ◽  
Gregory L. Tangonan ◽  
G. Richard Blair ◽  
Walee Chamulitrat ◽  
Larry Kevan

ABSTRACTGamma- and UV-induced defect centers in germanium and fluorine doped silica have been studied by electron paramagnetic resonance (EPR) spectroscopy. The complex spectrum at g≃2 in γ-irradiated germanium doped glass corresponds to a superposition of resonances from several germanium E′-centers. In UV-irradiated samples, however, the EPR spectrum is dominated by only one type of germanium E′-centers. Significant spectral simplification of γ-irradiated germanium doped silica can be achieved by heating or broadband photoirradiation. Similar results are observed in multimode germanium doped core optical fibers. UV-induced optical loss spectra in the 0.5–1.5 μm wavelength range were also measured in these core fibers as well as the growth kinetics of the UL-induced absorption. Gamma-irradiation of fluorine doped silica generated two different types of silicon E′-centers, Ea1. At lower radiation dose one sees a mixture of Ea1 and Ea2, but at higher radiation dose Ea2 dominates. A spectrum dominated by the Ea2 variant is also observed in LW-irradiated samples and in photobleached low gamma dose samples.


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