Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells

2015 ◽  
Vol 140 ◽  
pp. 361-365 ◽  
Author(s):  
Kohjiro Hara ◽  
Sachiko Jonai ◽  
Atsushi Masuda
2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Wonwook Oh ◽  
Seongtak Kim ◽  
Soohyun Bae ◽  
Nochang Park ◽  
Sung-Il Chan ◽  
...  

We investigated the migration of Sn and Pb onto the Ag fingers of crystalline Si solar cells in photovoltaic modules aged in field for 6 years. Layers of Sn and Pb were found on the Ag fingers down to the edge of the solar cells. This phenomenon is not observed in a standard acceleration test condition for PV modules. In contrast to the acceleration test conditions, field aging subjects the PV modules to solar irradiation and moisture condensation at the interface between the solar cells and the encapsulant. The solder ribbon releases Sn and Pb via repeated galvanic corrosion and the Sn and Pb precipitate on Ag fingers due to the light-induced plating under solar irradiation.


2017 ◽  
Vol 166 ◽  
pp. 132-139 ◽  
Author(s):  
Kohjiro Hara ◽  
Kinichi Ogawa ◽  
Yusuke Okabayashi ◽  
Hiroyuki Matsuzaki ◽  
Atsushi Masuda

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640008
Author(s):  
R. Miyazawa ◽  
H. Wakabayashi ◽  
K. Tsutsui ◽  
H. Iwai ◽  
K. Kakushima

Photovoltaic characteristics of ultra-thin single crystalline Si solar cells with thicknesses ranging from 7.6 to 3.3 nm are presented. While the short-circuit current (ISC) AM1.5 illumination has shown a linear relationship with the volume of the Si layer, a gradual increase in the open-circuit voltage (VOC) with thinner Si layer has been confirmed, implying the bandgap enlargement of the Si layer due to quantum confinement. Spectral response measurement has revealed an increased optical bandgap of 1.3 eV for 3.3-nm-thick Si solar cells, which is wider than that of 7.6-nm-thick Si ones. Although some process related issues have become clear during the fabrication of solar cells, they can be utilized as top cells for tandem configurations, exceeding the limit of the bulk Si solar cells.


RSC Advances ◽  
2014 ◽  
Vol 4 (66) ◽  
pp. 34823-34829 ◽  
Author(s):  
Jongsung Park ◽  
Nochang Park

Chemical wafer recovering processes fabricate virgin-like c-Si wafers from degraded c-Si solar cells.


2016 ◽  
Vol 157 ◽  
pp. 200-208 ◽  
Author(s):  
Praveen Kumar ◽  
Michael Pfeffer ◽  
Benjamin Willsch ◽  
Oliver Eibl ◽  
Lejo J. Koduvelikulathu ◽  
...  

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