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Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications
Superlattices and Microstructures
◽
10.1016/j.spmi.2018.07.028
◽
2018
◽
Vol 121
◽
pp. 55-63
◽
Cited By ~ 14
Author(s):
Prashant Singh
◽
Rajesh Kumar Jha
◽
Rajat Kumar Singh
◽
B.R. Singh
Keyword(s):
Buffer Layer
◽
Gate Stack
◽
Memory Improvement
◽
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
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Cited By
References
Memory improvement in lead-free BiFeO3 ferroelectric with high-k Al2O3 buffer layer for non-volatile memory applications
Applied Physics A
◽
10.1007/s00339-018-1926-5
◽
2018
◽
Vol 124
(7)
◽
Cited By ~ 2
Author(s):
Kamal Prakash Pandey
Keyword(s):
Buffer Layer
◽
Lead Free
◽
Memory Improvement
◽
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications
Journal of Materials Science Materials in Electronics
◽
10.1007/s10854-019-01895-9
◽
2019
◽
Vol 30
(16)
◽
pp. 15224-15235
◽
Cited By ~ 2
Author(s):
Rajesh Kumar Jha
◽
Prashant Singh
◽
Manish Goswami
◽
B. R. Singh
Keyword(s):
Buffer Layer
◽
Ferroelectric Properties
◽
Atomic Layer
◽
Gate Stack
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
Lead-zirconate-titanate based metal/ferroelectric/high-K/semiconductor (M/Fe/High-K/S) gate stack for non-volatile memory applications
Ferroelectrics
◽
10.1080/00150193.2016.1240565
◽
2016
◽
Vol 504
(1)
◽
pp. 139-148
◽
Cited By ~ 9
Author(s):
Prashant Singh
◽
Aditya Nath Bhatt
◽
Akansha Bansal
◽
Rajat Kumar Singh
◽
B. R. Singh
Keyword(s):
Lead Zirconate Titanate
◽
Lead Zirconate
◽
Gate Stack
◽
Zirconate Titanate
◽
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications
Applied Physics A
◽
10.1007/s00339-020-03632-0
◽
2020
◽
Vol 126
(6)
◽
Cited By ~ 1
Author(s):
Rajesh Kumar Jha
◽
Prashant Singh
◽
Upendra Kashniyal
◽
Manish Goswami
◽
B. R. Singh
Keyword(s):
Buffer Layer
◽
Nonvolatile Memory
◽
Electrical Characteristics
◽
Gate Stack
◽
High K
◽
Memory Applications
Download Full-text
Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications
Advances in Science and Technology - Disclosing Materials at the Nanoscale
◽
10.4028/3-908158-07-9.156
◽
2006
◽
pp. 156-166
Author(s):
Marco Fanciulli
◽
Michele Perego
◽
C. Bonafos
◽
A. Mouti
◽
S. Schamm
◽
...
Keyword(s):
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
High K Dielectric
◽
Memory Applications
Download Full-text
Resistive switching in high-k dielectrics for non-volatile memory applications
COMMAD 2012
◽
10.1109/commad.2012.6472390
◽
2012
◽
Author(s):
R.G. Elliman
◽
M.N. Saleh
◽
D.K. Venkatachalam
◽
T-H. Kim
◽
K. Belay
◽
...
Keyword(s):
Resistive Switching
◽
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
Rare earth-based high-k materials for non-volatile memory applications
Microelectronic Engineering
◽
10.1016/j.mee.2009.06.022
◽
2010
◽
Vol 87
(3)
◽
pp. 290-293
◽
Cited By ~ 9
Author(s):
M. Alessandri
◽
A. Del Vitto
◽
R. Piagge
◽
A. Sebastiani
◽
C. Scozzari
◽
...
Keyword(s):
Rare Earth
◽
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
High K Materials
◽
Memory Applications
Download Full-text
Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016 74th Annual Device Research Conference (DRC)
◽
10.1109/drc.2016.7548493
◽
2016
◽
Author(s):
Arnab Biswas
◽
Saurabh Tomar
◽
Adrian M. Ionescu
Keyword(s):
Gate Stack
◽
Vertical Band
◽
High K
◽
Band To Band Tunneling
◽
Non Volatile Memory
◽
Volatile Memory
◽
Hysteresis Characteristics
Download Full-text
Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications
Applied Physics A
◽
10.1007/s00339-018-1555-z
◽
2018
◽
Vol 124
(2)
◽
Cited By ~ 7
Author(s):
Prashant Singh
◽
Rajesh Kumar Jha
◽
Rajat Kumar Singh
◽
B. R. Singh
Keyword(s):
Electrical Properties
◽
Process Parameters
◽
Gate Stack
◽
Structural And Electrical Properties
◽
Non Volatile Memory
◽
Volatile Memory
◽
Memory Applications
Download Full-text
On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications
Bulletin of Materials Science
◽
10.1007/s12034-018-1624-0
◽
2018
◽
Vol 41
(4)
◽
Cited By ~ 5
Author(s):
Prashant Singh
◽
Rajesh Kumar Jha
◽
Rajat Kumar Singh
◽
B R Singh
Keyword(s):
Electrical Properties
◽
Silicon Structure
◽
High K
◽
Structural And Electrical Properties
◽
Non Volatile Memory
◽
Volatile Memory
◽
High K Dielectric
◽
Memory Applications
Download Full-text
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