Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

In this paper, a High-K dielectric permittivity Enhanced Depletion-JTE(HKED-JTE) for 10 kV ultra-high voltage is studied. The HKED-JTE improves the terminal protection efficiency by the self-charge balance of High-K dielectric polarization charges. The tolerance of the implantation dose window of HKED-JTE reaches 9 times as large as that of normal TZ-JTE with the same terminal area, and the corresponding BV holding theoretical breakdown voltage is over 80%. The thicker High-K layer accomplishes the modulation of the surface electric flux and decreases the electric field up to 51% and 47% at the abrupt junction J2 and J3 along the device interface between the SiC and High-K materials.

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology and sensing. The deposition of ultrathin high-k insulators on its surface is a key requirement for the fabrication of EG-based devices, and, in this context, atomic layer deposition (ALD) is the most suitable candidate to achieve uniform coating with nanometric thickness control. This paper presents an overview of the research on ALD of high-k insulators on EG, with a special emphasis on the role played by the peculiar electrical/structural properties of the EG/SiC (0001) interface in the nucleation step of the ALD process. The direct deposition of Al2O3 thin films on the pristine EG surface will be first discussed, demonstrating the critical role of monolayer EG uniformity to achieve a homogeneous Al2O3 coverage. Furthermore, the ALD of several high-k materials on EG coated with different seeding layers (oxidized metal films, directly deposited metal-oxides and self-assembled organic monolayers) or subjected to various prefunctionalization treatments (e.g., ozone or fluorine treatments) will be presented. The impact of the pretreatments and of thermal ALD growth on the defectivity and electrical properties (doping and carrier mobility) of the underlying EG will be discussed.

Food Security Sensing System Using a Waveguide Antenna Microwave Imaging through an Example of an Egg

In this paper, we present a form of food security sensing using a waveguide antenna microwave imaging system through an example of an egg. A waveguide antenna system with a frequency range of 7–13 GHz and a maximum gain of 17.37 dBi was proposed. The maximum scanning area of the waveguide antenna microwave imaging sensing system is 30 × 30 cm2. In order to study the resolution and sensitivity of the waveguide antenna microwave imaging sensing system, the circular and triangular high-k materials (with the same thickness but with different dielectric constants of the materials) were used as the testing sample for observing the microwave images. By using the proposed waveguide antenna microwave imaging sensing system, the high-k materials with different dielectric constants and shapes could be easily sensed. Therefore, the waveguide antenna microwave imaging sensing system could be potentially used for applications in rapid, non-destructive food security sensing. Regarding the example of an egg, the proposed waveguide antenna microwave imaging sensing system could effectively identify the health status of many eggs very quickly. The proposed waveguide antenna microwave imaging sensing system provides a simple, non-destructive, effective, and rapid method for food security applications.

CNTFETs

In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT with high-k materials resulting in high ION). Moreover, CNTs show both metallic and semiconducting properties; hence, by using metallic CNTs, interconnects can be realized to fabricate a circuit purely consisting of CNTs. This chapter will provide introduction to carbon nanotubes field effect transistor (CNTFETs) starting from material properties of carbon nanotubes and followed by how it can be used as semiconductor channel in field effect transistor (MOSFET) to form CNTFET. The different types of CNTFETs will be discussed based on the type of CNT used along with their advantages and disadvantages.