2016 74th Annual Device Research Conference (DRC)
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146
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Published By IEEE

9781509028283
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz

2016 ◽  
Author(s):  
Steven Wienecke ◽  
Brian Romanczyk ◽  
Matthew Guidry ◽  
Haoran Li ◽  
Elaheh Ahmadi ◽  
...  

Ballistic deflection transistor very high frequency modeling

2016 ◽  
Author(s):  
Jean-Francis Millithaler ◽  
Poorna Marthi ◽  
Nazir Hossain ◽  
Ignacio Iniguez-de-la-Torre ◽  
Javier Mateos ◽  
...  
Keyword(s):  
High Frequency ◽  
Very High Frequency ◽  
Ballistic Deflection Transistor ◽  
Very High

Building quantum logic circuits using arrays of superconducting qubits

2016 ◽  
Author(s):  
Jared B. Hertzberg ◽  
Antonio D. Corcoles ◽  
Maika Takita ◽  
Nicholas T. Bronn ◽  
Easwar Magesan ◽  
...  
Keyword(s):  
Quantum Logic ◽  
Logic Circuits ◽  
Superconducting Qubits

Electron-blocking NiO/crystalline n-Si heterojunction formed by ALD at 175°C

2016 ◽  
Author(s):  
Alexander H. Berg ◽  
Girija S. Sahasrabudhe ◽  
Ross A. Kerner ◽  
Barry P. Rand ◽  
Jeffrey Schwartz ◽  
...  

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

2016 ◽  
Author(s):  
Keita Konishi ◽  
Ken Goto ◽  
Quang Tu Thieu ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes

A novel device design to lower the on-resistance in GaN trench MOSFETs

2016 ◽  
Author(s):  
Chirag Gupta ◽  
Silvia H. Chan ◽  
Yuuki Enatsu ◽  
Anchal Agarwal ◽  
Stacia Keller ◽  
...  
Keyword(s):  
Device Design ◽  
Novel Device
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