Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
Rajesh Kumar Jha ◽  
Prashant Singh ◽  
Upendra Kashniyal ◽  
Manish Goswami ◽  
B. R. Singh
Keyword(s):  
Buffer Layer ◽  
Nonvolatile Memory ◽  
Electrical Characteristics ◽  
Gate Stack ◽  
High K ◽  
Memory Applications

scholarly journals Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

RSC Advances ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 592-598 ◽  
Author(s):  
Chin-I. Wang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Yu-Tung Yin ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
High K ◽  
Aln Buffer ◽  
Atomic Layer Deposited Aln

For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.

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