We investigate the dispersion relation and decay rate of plasmon modes in a double-layer system made of bilayer graphene (BLG) and infinite GaAs quantum well at zero-temperature within the generalized random-phase-approximation and taking into account the 2DEG layer-thickness and inhomogeneity of the background dielectric. We illustrate that the acoustic plasmon dispersion curve of the considered system differs significantly from that of monolayer graphene (MLG)–GaAs heterostructure and BLG–GaAs without layer-thickness. Calculations also demonstrate that meanwhile the optical plasmon curve is affected slightly by spacer width and exchange-correlation, the acoustic one depends remarkably on the interlayer distance, inhomogeneity of the background dielectric, carrier densities, spacer dielectric constant, quantum well width and exchange-correlations.
Tunable plasmon modes in doped AA-stacked bilayer graphene
