Enhanced second-order nonlinearity and tunable plasmon induced transparency in noncoplanar Dirac semimetal system

2021 ◽  
pp. 114510
Author(s):  
Sa Yang ◽  
Renlong Zhou ◽  
Qiawu Lin ◽  
Shuang Li ◽  
Kaleem Ullah
2019 ◽  
Vol 9 (8) ◽  
pp. 3325 ◽  
Author(s):  
Jianxing Zhao ◽  
Jianlin Song ◽  
Yao Zhou ◽  
Ruilong Zhao ◽  
Jianhong Zhou

2018 ◽  
Vol 57 (4) ◽  
pp. 752 ◽  
Author(s):  
Huan Chen ◽  
Huiyun Zhang ◽  
Xiaohan Guo ◽  
Shande Liu ◽  
Yuping Zhang

Plasmonics ◽  
2019 ◽  
Vol 14 (6) ◽  
pp. 1717-1723 ◽  
Author(s):  
Yongliang Liu ◽  
Yuning Du ◽  
Wenqian Liu ◽  
Sanmin Shen ◽  
Qiulin Tan ◽  
...  

2019 ◽  
Vol 449 ◽  
pp. 13-18 ◽  
Author(s):  
Sa Yang ◽  
Renlong Zhou ◽  
Dan Liu ◽  
Qiawu Lin ◽  
Shuang Li

2021 ◽  
Vol 36 (6) ◽  
pp. 676-683
Author(s):  
Daobin Wang ◽  
Jiahuan Yang ◽  
Wei Wang ◽  
Lihua Yuan ◽  
Xiaoxiao Li

The bulk Dirac semimetal (BDS) is an interesting material, similar to graphene, which can dynamically adjust its optical properties via a variation in its Fermi energy or electrical voltage. In this work, a BDS-based plasmonic device, which enables tunable terahertz plasmon-induced transparency, was proposed and designed. By using the finite element method, the surface plasmon polariton and plasmon-induced transparency of this device were systematically investigated. The results demonstrate that the plasmon-induced transparency of such device can be dynamically tuned by varying its Fermi energy. When the Fermi energy changes from 55 meV to 95 meV, the maximum group delay time of the device increases from 13.2 ps to 21 ps. In the case of a cascading device, the maximum group delay time can be further pushed up to 44.57 ps. The influence of the ambient refractive index on the optical properties of the proposed device was also considered and investigated.


2021 ◽  
Author(s):  
Chunzhen Fan ◽  
Peiwen Ren ◽  
Yuanlin Jia ◽  
Shuangmei Zhu ◽  
Junqiao Wang

2018 ◽  
Vol 423 ◽  
pp. 57-62 ◽  
Author(s):  
Huan Chen ◽  
Huiyun Zhang ◽  
Maodong Liu ◽  
Yunkun Zhao ◽  
Shande Liu ◽  
...  

2017 ◽  
Vol 42 (7) ◽  
pp. 1289 ◽  
Author(s):  
Y. H. Zhou ◽  
S. S. Zhang ◽  
H. Z. Shen ◽  
X. X. Yi

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