Numerical simulation of MHD rotator action on hydrodynamics and heat transfer in single crystal growth processes

1997 ◽  
Vol 180 (3-4) ◽  
pp. 388-400 ◽  
Author(s):  
M. Abricka ◽  
J. Krüminš ◽  
Yu. Gelfgat
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Growth Processes

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 283-288 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Integrated Approach ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Intrinsic Point Defect ◽  
Formation Mechanisms ◽  
Growing Conditions

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

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