β-Ga2O3 Used as a Saturable Sbsorber to Realize Passively Q-Switched Laser Output

β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ) method, and was used as a saturable absorber to realize a passively Q-switched all-solid-state 1 μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of the Nd:GYAP solid-state laser, Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW, while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that the β-Ga2O3 crystal has great potential in the development of an all-solid-state 1 μm pulsed laser.

The structural and magnetic properties of single-crystal Gd4Ga2O9

The crystalline structures and magnetic and thermodynamic properties of a Gd4Ga2O9 single crystal grown with the optical floating zone technique have been investigated. Gd4Ga2O9 crystallizes in a monoclinic structure with the space group P21/c at room temperature. Temperature-dependent magnetic susceptibility measurements along the three crystallographic axes reveal a paramagnetic (PM) behavior between 2 and 300 K. A Curie–Weiss (CW) law fit was carried out and the CW temperature θCW and magnetic frustration parameter f were calculated; these suggest antiferromagnetic (AFM) interactions between Gd3+ spins and a strong magnetic frustration. The field dependence of the magnetization at 2 K further confirms the magnetic frustration characteristics. A distinct λ-shaped peak at 1.4 K in the heat capacity curves suggests a transition from the PM to AFM phase. The magnetic entropy is contributed solely by Gd3+ ions.