A transient model for the sublimation growth of silicon carbide single crystals

1999 ◽  
Vol 205 (3) ◽  
pp. 294-304 ◽  
Author(s):  
Nikolaus Bubner ◽  
Olaf Klein ◽  
Peter Philip ◽  
Jürgen Sprekels ◽  
Krzysztof Wilmański
Keyword(s):  
Silicon Carbide ◽  
Single Crystals ◽  
Transient Model ◽  
Sublimation Growth

scholarly journals Magnetic properties of the natural and isotope-modified diamond and silicon carbide

2018 ◽  
Vol 185 ◽  
pp. 04007 ◽  
Author(s):  
A.N. Taldenkov ◽  
A.V. Inyushkin ◽  
E.A. Chistotina ◽  
V.G. Ralchenko ◽  
A.P. Bolshakov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Magnetic Properties ◽  
Isotopic Composition ◽  
Single Crystals ◽  
High Purity ◽  
Diamagnetic Susceptibility ◽  
Synthetic Diamond ◽  
Paramagnetic Centers ◽  
Natural Isotopic Composition ◽  
Ferromagnetic Component

The magnetic properties of single crystals of synthetic diamond and crystals of silicon carbide were studied. High-purity samples of diamonds synthesized with HPHT and CVD technologies were used. The crystals of silicon carbide were grown by sublimation and industrial technology. Along with samples with a natural isotopic composition, monoisotopic crystals of diamond (99.96% 12C and 99.96% 13C) and silicon carbide (99.993% of 28Si) were studied. On the basis of the data obtained, the diamagnetic susceptibility was determined and the concentration of paramagnetic centers and the content of the ferromagnetic component were evaluated. The results are discussed.

Polytype formation in silicon carbide single crystals

2007 ◽  
Vol 16 (3) ◽  
pp. 654-657 ◽  
Author(s):  
Xiang-Biao Li ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Bing Xiao
Keyword(s):  
Silicon Carbide ◽  
Single Crystals

Growth of Bulk Silicon Carbide Single Crystals

1993 ◽  
pp. 37-46
Author(s):  
Yu. M. Tairov ◽  
V. F. Tsvetkov
Keyword(s):  
Silicon Carbide ◽  
Single Crystals ◽  
Bulk Silicon

Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals

2009 ◽  
Author(s):  
Aurélie Gentils ◽  
Marie-France Barthe ◽  
Werner Egger ◽  
Peter Sperr ◽  
Floyd D. McDaniel ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystals

Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

1997 ◽  
Vol 46 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
M. Pons ◽  
E. Blanquet ◽  
J.M. Dedulle ◽  
R. Madar ◽  
C. Bernard
Keyword(s):  
Single Crystals ◽  
Sublimation Growth

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

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