Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Estimation of Thermal Boundary Conditions by Gradient Based and Genetic Algorythms

2012 ◽  
Vol 729 ◽  
pp. 144-149 ◽  
Author(s):  
Imre Felde
Keyword(s):  
Heat Transfer ◽  
Boundary Conditions ◽  
Optimization Methods ◽  
Optimization Techniques ◽  
Nsga Ii ◽  
Thermal Boundary Conditions ◽  
Treatment Processes ◽  
Gradient Based ◽  
Type Boundary

The prediction of third type boundary conditions occurring during heat treatment processes is an essential requirement for characterization of heat transfer phenomena. In this work, the performance of four optimization techniques is studied. These models are the Conjugate Gradient Method, the Levenberg-Marquardt Method, the Simplex method and the NSGA II algorithm. The models are used to estimate the heat transfer coefficient during transient heat transfer. The performance of the optimization methods is demonstrated using numerical techniques.

CHARACTERIZATION OF CdZnTe CRYSTALS BY RESISTIVITY MEASUREMENTS AND CHEMICAL ETCHING

2002 ◽  
Vol 16 (17) ◽  
pp. 615-619
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
H. CHEN ◽  
Y. J. HE ◽  
K. Y. LIU
Keyword(s):  
Chemical Etching ◽  
Defect Density ◽  
Radiation Detectors ◽  
High Quality ◽  
Density Region ◽  
Resistivity Measurements ◽  
High Defect Density ◽  
Vertical Bridgman ◽  
Defect Densities

CdZnTe crystals grown by the vertical Bridgman method were characterized by measuring their resistivity and chemical etching in the well-known Nakagawa etchant (3HF:2H2O2:2H2O, vol./vol.). It was found that the resistivity of the CdZnTe crystals was between 4.33 × 103 and 8.50 × 106 Ωcm. Defect densities were much higher around the periphery of some CdZnTe samples due to the influence of mechanical stress caused by contact with the crucible walls during the CdZnTe crystal growth. The sizes of the high defect density region ranged from 1.8 to 2.8 mm. Such high defect density region should be eliminated in order to make high-quality radiation detectors or prepare the substrates for the epitaxial growth of HgCdTe.

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

2001 ◽  
Vol 353-356 ◽  
pp. 15-20 ◽  
Author(s):  
Erwin Schmitt ◽  
Michael Rasp ◽  
Arnd Dietrich Weber ◽  
M. Kölbl ◽  
Robert Eckstein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Defect Reduction ◽  
Thermal Boundary Conditions

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

2014 ◽  
Vol 778-780 ◽  
pp. 31-34 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Nikolaos Tsavdaris ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
Thierry Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Source ◽  
Single Crystal ◽  
Growth Process ◽  
Graphite Crucible ◽  
Vapor Species ◽  
Sublimation Growth ◽  
Graphite Part ◽  
Additional Carbon Source ◽  
Good Agreement

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 19-22 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Michl Kaiser ◽  
Philip Hens ◽  
Peter J. Wellmann ◽  
Rickard Liljedahl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Phase ◽  
Growth Process ◽  
Room Temperature ◽  
Tantalum Foil ◽  
Photoluminescence Intensity ◽  
Room Temperature Photoluminescence ◽  
Optical Stability ◽  
Morphological Instabilities ◽  
Sublimation Growth

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer

2017 ◽  
Vol 897 ◽  
pp. 75-78 ◽  
Author(s):  
Yuichiro Mabuchi ◽  
Tatsuya Masuda ◽  
Daisuke Muto ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Silicon Carbide ◽  
Buffer Layer ◽  
Defect Density ◽  
Buffer Layers ◽  
Defect Reduction ◽  
Conventional Condition ◽  
Reduction Effect ◽  
Defect Densities ◽  
Condition B

We investigated the carrot-defect reduction effect by optimizing the buffer layers of 4H-Silion Carbide (SiC) epitaxial wafers. The SiC epitaxial wafer with the 0.5 μm-thick optimized condition-B buffer layer show the carrot-defect density of 0.13 cm-2, since that with the conventional-A buffer layer were 0.68 cm-2. Although the average bunching length with the optimized condition-B buffer layer was 7-times longer than those with the conventional condition-A buffer layer, we could reduce the bunching length by applying the optimized condition-B only to the initial 0.05 μm-thick buffer layer. Finally, with the initial 0.05 μm-thick optimized condition-B buffer layers, we could achieve the SiC epitaxial wafers with only half the carrot-defect densities of those with the conventional condition-A buffer layers, while the average bunching lengths were less than 100 μm. With this condition, we could achieve the estimated yield of 90.1% with 4 x 4 mm chips, while that with the conventional condition-A buffer layer was 81.9%.

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 52-55 ◽  
Author(s):  
Thomas Hupfer ◽  
Philip Hens ◽  
Michl Kaiser ◽  
Valdas Jokubavicius ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Theoretical Model ◽  
Mass Transport ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Mean Free Path ◽  
Inert Gas ◽  
Diffusive Growth ◽  
The Mean ◽  
Sublimation Growth

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Michael O'Loughlin ◽  
K. G. Irvine ◽  
J. J. Sumakeris ◽  
M. H. Armentrout ◽  
B. A. Hull ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Process Optimization ◽  
High Voltage ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Device Processing ◽  
Defect Densities ◽  
Hot Wall Epitaxy

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

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