Scanning tunnelling microscopy investigation of the oxygen-induced faceting and “nano-faceting” of a vicinal copper surface

1997 ◽  
Vol 376 (1-3) ◽  
pp. 374-388 ◽  
Author(s):  
P.J. Knight ◽  
S.M. Driver ◽  
D.P. Woodruff
2016 ◽  
Vol 646 ◽  
pp. 26-30 ◽  
Author(s):  
Özge Sağlam ◽  
Görsel Yetik ◽  
Joachim Reichert ◽  
Johannes V. Barth ◽  
Anthoula C. Papageorgiou

1997 ◽  
Vol 7 (4) ◽  
pp. 491-502 ◽  
Author(s):  
Mohammad H. Zareýe ◽  
Mohammad R. Mozafarý ◽  
VasÝF Hasirci ◽  
Erhan Pýkýn

1991 ◽  
Vol 237 ◽  
Author(s):  
E. J. Heller ◽  
M. G. Lagally

ABSTRACTThe surface morphology of MBE - grown GaAs(001) has been investigated using scanning tunnelling microscopy (STM) and reflection high - energy electron diffraction (RHEED). STM shows that the missing - dimer - row structure of the (2 × 4)/c(2 × 8) reconstruction consists of rows of clusters of two As dimers separated by rows of two missing dimers, in agreement with previous reports. Layers grown on nominally flat substrates display a multi - level system of terraces elongated along [110] suggesting that growth occurs primarily by sticking at B - type steps. For films grown under certain growth conditions, B - type steps on vicinal substrates exhibit a dendritic step morphology, which may be an example of a step flow growth instability consistent with limited Ga diffusion over steps.


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