Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

2000 ◽  
Vol 368 (2) ◽  
pp. 211-215 ◽  
Author(s):  
Y Liao ◽  
F Ye ◽  
Q.Y Shao ◽  
C Chang ◽  
G.Z Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Growth Mechanism ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Film Growth ◽  
Hot Filament

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

Growth and Characterization of Polycrystalline Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
T. Stacy ◽  
F. Shahedipour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrochemical Process ◽  
Nucleation Density ◽  
High Quality ◽  
Average Grain Size ◽  
Hot Filament

AbstractHot filament chemical vapor deposition (HFCVD) was utilized to grow high quality diamond film on porous silicon (PS) substrates to a thickness of 5–6 μm. Boron-doped silicon substrates of <100> orientation and resistivity of 5–15 ohm-cm were anodized by the electrochemical process to form PS. A slurry of diamond paste (1/4 micron average grain size) was rubbed on the samples for a few seconds before introduction into the chamber. Diamond film growth on the PS has the advantages of shorter incubation time and higher nucleation density as evident from scanning electron microscopy (SEM). The results of X-ray diffraction confirm the growth of predominatly (111) oriented high quality diamond film. Electrical properties were also studied by sputtering circular gold contacts on top of diamond film and measuring current-voltage (I-V) characteristics.

Ultraviolet Raman spectroscopy characterizes chemical vapor deposition diamond film growth and oxidation

1995 ◽  
Vol 77 (11) ◽  
pp. 5916-5923 ◽  
Author(s):  
Richard W. Bormett ◽  
Sanford A. Asher ◽  
Robert E. Witowski ◽  
William D. Partlow ◽  
Robert Lizewski ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Diamond Film Growth
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