Extended π-Electron Delocalization in Quinoid-Based Conjugated Polymers Boosts Intrachain Charge Carrier Transport

Author(s):  
Tsubasa Mikie ◽  
Masahiro Hayakawa ◽  
Kenta Okamoto ◽  
Keitaro Iguchi ◽  
Shuhei Yashiro ◽  
...  
1999 ◽  
Vol 110 (18) ◽  
pp. 9214-9222 ◽  
Author(s):  
D. Hertel ◽  
H. Bässler ◽  
U. Scherf ◽  
H. H. Hörhold

2018 ◽  
Vol 122 (27) ◽  
pp. 15063-15069
Author(s):  
Deyao Jiang ◽  
Weikang Chen ◽  
Zhe Lin ◽  
Sheng Li ◽  
Thomas F. George

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  

1979 ◽  
Vol 53 (3-4) ◽  
pp. 271-280 ◽  
Author(s):  
S. C. Mathur ◽  
B. Kumar ◽  
Keya Roy

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


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