Electrical Characterization of the Graphene-SiC Heterojunction
2012 ◽
Vol 717-720
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pp. 641-644
Keyword(s):
Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.
Keyword(s):
Keyword(s):
2013 ◽
Vol 117
(4)
◽
pp. 1633-1640
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2013 ◽
Vol 135
(30)
◽
pp. 11389-11396
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2015 ◽
Vol 212
(11)
◽
pp. 2553-2558
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2019 ◽
Vol 7
(7)
◽
pp. 3054-3065
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2004 ◽
Vol 411
(1)
◽
pp. 265-272
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2003 ◽
Vol 13
(5)
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pp. 1004-1010
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