scholarly journals p-Doping of a Hole Transport Material via a Poly(ionic liquid) for over 20% Efficiency and Hysteresis-Free Perovskite Solar Cells

2020 ◽  
Vol 3 (2) ◽  
pp. 1393-1401 ◽  
Author(s):  
Camille Geffroy ◽  
Eftychia Grana ◽  
Takeru Bessho ◽  
Samy Almosni ◽  
Zeguo Tang ◽  
...  
2019 ◽  
Author(s):  
Pietro Caprioglio ◽  
Saul Daniel Cruz Lemus ◽  
Sabastian Caicedo-Davila ◽  
Martin Stolterfoht ◽  
Christian M. Wolff ◽  
...  

Author(s):  
Pietro Caprioglio ◽  
Daniel Cruz ◽  
Sebastian Caicedo-Davila ◽  
Fengshuo Zu ◽  
Albertus Adrian Sutanto ◽  
...  

Approaches to boost the efficiency and stability of perovskite solar cells often address one singular problem in a specific device configuration. In this work, we utilize a poly(ionic-liquid) (PIL) to...


MRS Advances ◽  
2020 ◽  
Vol 5 (64) ◽  
pp. 3555-3564
Author(s):  
Omar Asif ◽  
Farshad Azadian ◽  
Alok C. Rastogi

AbstractIn high efficiency organic-inorganic perovskite solar cells formed as a multilayer structure, the hole transporting layer (HTL) at the perovskite absorber layer interface has a critical role. Organic HTLs based on Spiro-OMeTAD and PTAA have led to high efficiencies but displayed poor long-term stability and involves expensive purification processes that hinders universal low-cost commercialization goals for perovskite solar cells. Though as an inorganic alternative, transition metal chalcogenides have been investigated for HTL recently, the hot-injection method often used in synthesis has shown poor reproducibility and difficulty in scaling-up. In this work we demonstrate an ab initio facile inexpensive scalable synthesis of transition metal dichalcogenide (TiS2) by electrodeposition from ionic liquids as a low-cost inorganic HTL for perovskite solar cells. The TiS2 thin films were electrodeposited from choline chloride–urea eutectic based ionic liquid electrolytes at 80°C with Na2S2O3 as sulphur and TiCl4 as titanium source. From cyclic voltammetry studies the deposition potential of TiS2 was optimized at -0.8V vs Pt. The as-deposited TiS2 HTL exhibited polycrystalline structure with preferential growth along (001), (100), (002), (102), (110), (111) planes. The Raman spectroscopy of the films showed peaks around 225 cm−1 and 332 cm−1 attributed to the Eg and A1 g Raman modes respectively. The synthesized thin films demonstrated sharp optical bandgap edge along with bandgap tunability as the bandgap (direct) decreased from 1.53 eV to 1.49 eV, 1.40 eV, and 1.34 eV with gradual change in deposition potential from −0.8 V to −0.9 V, −1.0 V, and −1.1 V vs Pt, respectively. This aspect has potential for alignment of valance band edge in facilitating the hole transport at the perovskite-TiS2 interface. The absorption coefficient in visible-light range of the as-deposited TiS2 thin films likewise has shown a dependence on the synthesis potential which is highly conducive for application as an HTL in multilayer solar cell structure. The TiS2 thin films were observed to be p-type as shown from the Hall effect studies with a carrier mobility up to 14.4 cm2V−1s−1. A detailed study of the effect of the synthesis parameters on the structural, optical, band-edge, and electronic properties of TiS2 thin films suitable for application as HTL in perovskite solar cells is presented.


2020 ◽  
Author(s):  
Navind Harindu Hemasiri ◽  
Samrana Kazim ◽  
Laura Calio ◽  
Sanghyun Paek ◽  
Manuel Salado ◽  
...  

<p>Perovskite solar cells have set a new milestone in terms of efficiencies in the thin film photovoltaics category. Long-term stability of perovskite solar cells is of paramount importance but remains a challenging task. The lack of perovskite solar cells stability in real-time operating conditions erodes and impedes commercialization. Further improvements are essential with a view to delivering longer-lasting photovoltaic (PV) performances. An ideal path in this direction will be to identify novel dopants for boosting the conductivity and hole mobility of hole transport materials (HTMs), and by so doing the usage of hygroscopic and deliquescent additive materials can be avoided. Pyridine-based ionic liquids represent a well-known class of ultra-hydrophobic materials, which are suitable for their application in opto-electrical devices. The present work demonstrates the employment of ionic liquids into a dissymmetric fluorene-dithiophene, FDT (2’,7’ -bis(bis(4-methoxyphenyl)amino) spiro[cyclopenta[2,1-b:3,4-b’]dithiophene-4,9’-fluorene]) based HTM to understand the doping mechanisms. <i>N</i>-heterocyclic hydrophobic ionic liquid, 1-butyl-3-methylpyidinium bis(trifluoromethylsulfonyl)imide (BMP<i>y</i>TFSI) as p-type dopant for FDT was found to increase the conductivity of FDT, to higher geometrical capacitance, to facilitate homogeneous film formation, and to enhance device stability. Our findings open up a broad range of hole-transport materials to control the degradation of the underlying water-sensitive active layer by substituting hygroscopic element. </p>


2020 ◽  
Author(s):  
Navind Harindu Hemasiri ◽  
Samrana Kazim ◽  
Laura Calio ◽  
Sanghyun Paek ◽  
Manuel Salado ◽  
...  

<p>Perovskite solar cells have set a new milestone in terms of efficiencies in the thin film photovoltaics category. Long-term stability of perovskite solar cells is of paramount importance but remains a challenging task. The lack of perovskite solar cells stability in real-time operating conditions erodes and impedes commercialization. Further improvements are essential with a view to delivering longer-lasting photovoltaic (PV) performances. An ideal path in this direction will be to identify novel dopants for boosting the conductivity and hole mobility of hole transport materials (HTMs), and by so doing the usage of hygroscopic and deliquescent additive materials can be avoided. Pyridine-based ionic liquids represent a well-known class of ultra-hydrophobic materials, which are suitable for their application in opto-electrical devices. The present work demonstrates the employment of ionic liquids into a dissymmetric fluorene-dithiophene, FDT (2’,7’ -bis(bis(4-methoxyphenyl)amino) spiro[cyclopenta[2,1-b:3,4-b’]dithiophene-4,9’-fluorene]) based HTM to understand the doping mechanisms. <i>N</i>-heterocyclic hydrophobic ionic liquid, 1-butyl-3-methylpyidinium bis(trifluoromethylsulfonyl)imide (BMP<i>y</i>TFSI) as p-type dopant for FDT was found to increase the conductivity of FDT, to higher geometrical capacitance, to facilitate homogeneous film formation, and to enhance device stability. Our findings open up a broad range of hole-transport materials to control the degradation of the underlying water-sensitive active layer by substituting hygroscopic element. </p>


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