In recent years, we have reported uncooled microbolometer with amorphous
vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide
showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has
the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of
amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium
oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into
vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this
changes of electronic structure attribute to electrical properties such as high TCR values of
vanadium-tungsten oxide.