Investigation of the Photoresponse and Time-Response Characteristics of HDA-BiI5-Based Photodetectors

Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10−3 A/W and 8.5 × 10−4 A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.

Minute Torsional Reorganization Elicited Large Visible Range Fluorescence Gain in Terphenyl Derived Crystals

Understanding the variations in the solid-state optical signals of organic semiconductor materials upon subtle structural rearrangement or intermolecular interactions would help to extract the best performance in their electro-optic devices....

Computational studies on nitrogen (N)-substituted 2,6-diphenylanthracene: a novel precursor of organic field effect transistor materials

The investigation shows that nitrogen (N)-substituted π-conjugated semiconductor materials have improved optical and electronic performance and work efficiently in organic field-effect transistors (OFETs).

The Influences of the Hyperbolic Two-Temperatures Theory on Waves Propagation in a Semiconductor Material Containing Spherical Cavity

This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.

Red Carbon: a Carbon-Oxygen-based covalent semiconductor for selective amine sensing

The requirements for organic semiconductor materials and new methods for their synthesis at low temperature have risen over the last decades, especially due to concerns of sustainability. Herein, we present an innovative method for the synthesis of a so-called “red carbon” thin film, being composed of carbon and oxygen, only. This material was already described by Kappe and Ziegler at the beginning of the 20th century, but now can complement the current research on covalent organic semiconductor materials. The herein described red carbon can be homogeneous deposited on glass substrates as thin ilms which reveal a highly ordered structure. The films are highly reactive towards amines and were employed as amine vapor sensors for a scope of analogous amines. The gas-to-solid phase reaction causes a significant change of the films optical properties in all cases, blue-shifting the bandgap and the photoluminescence spectra from the red to the near UV range. The irreversible chemical reaction between the thin film and the vapor was also exploited for the preparation of nitrogen containing thin carbon films. We expect the herein presented red carbon material is of interest not only for sensing applications, but also in optoelectronics.