CO Oxidation on Rh(100):  Multisite Atomistic Lattice-Gas Modeling

2007 ◽  
Vol 111 (40) ◽  
pp. 14698-14706 ◽  
Author(s):  
Da-Jiang Liu

2012 ◽  
Vol 1411 ◽  
Author(s):  
Da-Jiang Liu ◽  
David M. Ackerman ◽  
Xiaofang Guo ◽  
Marvin A. Albao ◽  
Luke Roskop ◽  
...  

ABSTRACTStepped Si(100) surfaces exhibit alternating stiff SA and meandering SB steps, and thus constitute a so-called AB-vicinal surface. Both growth by Molecular Beam Epitaxy (MBE) or Chemical Vapor Deposition (CVD), and erosion by ion sputtering or chemical etching, induce step pairing, although different factors contribute. In addition, more complex pattern formation often occurs during step train motion. We synthesize recent developments in modeling of these processes ranging from ab-initio electronic structure approaches for key surface energetics, to atomistic lattice-gas modeling, to coarse-grained sharp-interface (front-tracking) and smeared-interface (phase-field) step dynamics approaches. We briefly describe development of new formalisms related to coarse-grained approaches, as well as selected results for step pairing.



2013 ◽  
Vol 1498 ◽  
pp. 249-254 ◽  
Author(s):  
Y. Han ◽  
A. K. Engstfeld ◽  
C.-Z. Wang ◽  
L. D. Roelofs ◽  
R. J. Behm ◽  
...  

ABSTRACTAtomistic lattice-gas models for thermodynamically and kinetically directed assembly are applied to Ru nanocluster formation on a monolayer of graphene supported on Ru(0001) at 309 K. Nanocluster density, mean size, height distribution, and spatial ordering are analyzed by kinetic Monte Carlo simulations. Both models can reproduce the experimental data, but additional density functional theory analysis favors the former.





2004 ◽  
Vol 859 ◽  
Author(s):  
Marvin A. Albao ◽  
Da-Jiang Liu ◽  
Cheol H. Choi ◽  
Mark S. Gordon ◽  
J. W. Evans

ABSTRACTExposure of a vicinal Si(100) surface to oxygen at around 550 C produces etching-mediated step recession. In addition, some oxide islands are formed which locally pin receding steps. We develop an atomistic lattice-gas model for this process which accounts for the interplay between oxygen surface chemistry (adsorption, diffusion, oxide formation, and etching via SiO desorption) and the silicon surface and step dynamics (anisotropic diffusion and aggregation of di-vacancies formed by etching, and ad-dimer attachment-detachment dynamics at steps incorporating anisotropic energetics). Kinetic Monte Carlo simulation of this model produces step morphologies retaining some qualitative but not quantitative features of their equilibrium structure (alternating rough SB steps and smooth SA steps), except for pinning which produces protruding “fingers”. These features are seen in Scanning Tunneling Microscopy studies.







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