Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain

Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4936-4941 ◽  
Author(s):  
Rui-wen Shao ◽  
Kun Zheng ◽  
Bin Wei ◽  
Yue-fei Zhang ◽  
Yu-jie Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Physical Properties ◽  
Zno Nanowires ◽  
Uniaxial Strain ◽  
Bandgap Engineering ◽  
Electronic And Optical Properties

Bandgap engineering is a common practice for tuning semiconductors for desired physical properties.

First-principles study of the electronic and optical properties of ZnO nanowires

2009 ◽  
Vol 18 (6) ◽  
pp. 2508-2513 ◽  
Author(s):  
Zhang Fu-Chun ◽  
Zhang Zhi-Yong ◽  
Zhang Wei-Hu ◽  
Yan Jun-Feng ◽  
Yong Jiang-Ni
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Zno Nanowires ◽  
Electronic And Optical Properties ◽  
First Principles Study

Pressure modulates the phase stability and physical properties of zinc nitride iodine

RSC Advances ◽  
2015 ◽  
Vol 5 (96) ◽  
pp. 78754-78759 ◽  
Author(s):  
Xiaofeng Li ◽  
Lin Xue ◽  
Lijuan Tang ◽  
Ziyu Hu
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Physical Properties ◽  
Density Function ◽  
Phase Stability ◽  
Chemical Bonding ◽  
Metal Nitride ◽  
Electronic And Optical Properties ◽  
Zinc Nitride ◽  
Bonding Characteristics

To explore new stable phases in metal nitride halides, the structural, electronic and optical properties, and chemical bonding characteristics of Zn2NI under pressure were studied on the basis of crystal structure predicting evolution and density function calculations.

Bandgap and Interface Engineering for Advanced Electronic and Photonic Devices

MRS Bulletin ◽  
1991 ◽  
Vol 16 (6) ◽  
pp. 23-29 ◽  
Author(s):  
Federico Capasso
Keyword(s):  
Optical Properties ◽  
Molecular Beam ◽  
Photonic Devices ◽  
Enabling Technology ◽  
Bandgap Engineering ◽  
New Approach ◽  
Electronic And Optical Properties ◽  
Semiconductor Structures ◽  
Spatially Varying ◽  
New Generation

During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of electronic and photonic devices. Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ~2.5 Å (~1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way. Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.The enabling technology which has made bandgap engineering an exciting reality with far reaching implications for science and technology is molecular beam epitaxy (MBE), pioneered by Cho and Arthur in the late 1960s.In the subsequent decade MBE demonstrated jts ability to create ultra-thin (10–100 Å) layers and atomically abrupt interfaces between two different semiconductors (heterojunctions).

Electronic and Optical Properties of Arsenene Under Uniaxial Strain

2017 ◽  
Vol 23 (1) ◽  
pp. 214-218 ◽  
Author(s):  
Wenqi Xu ◽  
Pengfei Lu ◽  
Liyuan Wu ◽  
Chuanghua Yang ◽  
Yuxin Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Uniaxial Strain ◽  
Electronic And Optical Properties
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