From NdFeB magnets towards the rare-earth oxides: a recycling process consuming only oxalic acid

RSC Advances ◽  
2014 ◽  
Vol 4 (109) ◽  
pp. 64099-64111 ◽  
Author(s):  
Tom Vander Hoogerstraete ◽  
Bart Blanpain ◽  
Tom Van Gerven ◽  
Koen Binnemans
Keyword(s):  
Rare Earth ◽  
Oxalic Acid ◽  
Rare Earth Metals ◽  
Rare Earth Oxides ◽  
Recycling Process ◽  
Ndfeb Magnets ◽  
The Rare Earth

A recycling process was developed in which only oxalic acid is consumed to remove and separate the rare-earth metals from NdFeB magnets.

Physico-chemical properties of the rare-earth metals, scandium, and yttrium

1963 ◽  
Vol 79 (2) ◽  
pp. 263-293 ◽  
Author(s):  
E.M. Savitskii ◽  
V.F. Terekhova ◽  
O.P. Naumkin
Keyword(s):  
Rare Earth ◽  
Rare Earth Metals ◽  
Chemical Properties ◽  
Physico Chemical ◽  
The Rare Earth

DETERMINATION OF THE RARE EARTH METALS IN THE RED MUD FOR POSSIBLE UTILIZATION

2018 ◽  
Vol 17 (8) ◽  
pp. 2001-2009
Author(s):  
Tatjana Juzsakova ◽  
Akos Redey ◽  
Le Phuoc Cuong ◽  
Zsofia Kovacs ◽  
Tamas Frater ◽  
...  
Keyword(s):  
Rare Earth ◽  
Red Mud ◽  
Rare Earth Metals ◽  
The Rare Earth

Tetranuclear and Pentanuclear Compounds of the Rare-Earth Metals: Synthesis and Magnetism

2015 ◽  
Vol 54 (16) ◽  
pp. 7846-7856 ◽  
Author(s):  
Munendra Yadav ◽  
Abhishake Mondal ◽  
Valeriu Mereacre ◽  
Salil Kumar Jana ◽  
Annie K. Powell ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Metals ◽  
The Rare Earth

The Chemical Bond in Carbides of the Rare-Earth Metals

1974 ◽  
pp. 417-422
Author(s):  
T. Ya. Kosolapova ◽  
G. N. Makarenko ◽  
L. T. Domasevich
Keyword(s):  
Rare Earth ◽  
Chemical Bond ◽  
Rare Earth Metals ◽  
The Rare Earth

Optical properties of oxides of the rare-earth metals

1962 ◽  
Vol 3 (3) ◽  
pp. 323-325 ◽  
Author(s):  
S. S. Batsanov ◽  
G. N. Grigor'eva ◽  
N. P. Sokolova
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Metals ◽  
The Rare Earth

Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jesse S. Jur ◽  
Ginger D. Wheeler ◽  
Matthew T. Veety ◽  
Daniel J. Lichtenwalner ◽  
Douglas W. Barlage ◽  
...  
Keyword(s):  
Rare Earth ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Rare Earth Oxides ◽  
Oxide Semiconductor ◽  
Native Oxide ◽  
Enhancement Mode ◽  
Effect Transistor ◽  
The Rare Earth

ABSTRACTHigh-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

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