Short-range order in defective half-Heusler thermoelectric crystals

2019 ◽  
Vol 12 (5) ◽  
pp. 1568-1574 ◽  
Author(s):  
Kaiyang Xia ◽  
Pengfei Nan ◽  
Shihua Tan ◽  
Yumei Wang ◽  
Binghui Ge ◽  
...  

The discovery of short-range order, associated with diffuse bands in electron diffraction patterns, provides new insights into defective half-Heusler thermoelectric crystals.

Author(s):  
Z.-R. Dai ◽  
Z.L. Wang

Diffuse scattering of stabilized cubic zirconia is an interesting subject for many years because it is correlated to the local atomic arrangements that deviate from the average structure, thus, it is responsible for many important physical properties of the material, such as electric conductivity and structural stability. Much research work was performed using X-ray and neutron diffraction. As limited by the nature of these techniques, however, large size crystals are required to perform the experiments, thus, the results are a statistical average over a larger volume containing defects, interfaces and dislocations. In this paper, electron diffraction is used to characterize the diffuse scattering of submicron size cubic ZrO2 partially stabilized with MgO and Y2O3. Kinematical electron diffraction theory is applied to calculate the diffuse scattering patterns and the Cowley‘s short-range order (SRO) parameters. Discussion relating to short-range correlation between oxygen and vacancy, vacancy and vacancy is given.


Author(s):  
J.C. Barry ◽  
R.S. Timsit ◽  
D. Landheer

Tantalum-aluminium thin films have assumed considerable technological importance since the discovery in the late 1960's that the films are useful in the fabrication of thin film resistors and capacitors. It is generally claimed that these films, when prepared by co-sputtering Ta and Al, are amorphous over a range of Ta concentrations extending approximately from 15 to 75 at%, and are crystalline beyond this range. Diffuse electron diffraction patterns and ‘mottle pattern’ transmission electron micrographs are typical characteristics of the amorphous phase. In this present study we have attempted to identify any atomic short range order in the amorphous Ta-Al films and to follow the changes in this order as the Ta concentration increases across the amorphous/crystalline transition. The co-sputtered Ta-Al films of ≈100A thickness were examined in a high resolution 4000EX electron microscope (top entry, ±15°(x,y) tilt, Cs = 1.0mm ) at 400kV.


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