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Understanding the Response of GaN HEMT to Optimization Criteria in RF Power Amplifiers Using the Analytic Approach
Active and Passive RF Devices Seminar
◽
10.1049/ic.2016.0008
◽
2016
◽
Author(s):
M. Rasheduzzaman
◽
N. Chevaux
◽
M.M. De Souza
◽
N. McEwan
◽
R. Rayit
◽
...
Keyword(s):
Power Amplifiers
◽
Analytic Approach
◽
Rf Power Amplifiers
◽
Rf Power
◽
Optimization Criteria
◽
Gan Hemt
Download Full-text
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References
Linearity of GaN HEMT RF power amplifiers - a circuit perspective
2012 IEEE/MTT-S International Microwave Symposium Digest
◽
10.1109/mwsym.2012.6259553
◽
2012
◽
Cited By ~ 13
Author(s):
Hassan Sarbishaei
◽
David Yu-Ting Wu
◽
Slim Boumaiza
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
Download Full-text
Challenges in the design of wideband GaN-HEMT based class-G RF-power amplifiers
2016 German Microwave Conference (GeMiC)
◽
10.1109/gemic.2016.7461587
◽
2016
◽
Cited By ~ 6
Author(s):
Nikolai Wolff
◽
Wolfgang Heinrich
◽
Olof Bengtsson
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
Download Full-text
Nonlinear characterization techniques for improving accuracy of GaN HEMT model predictions in RF power amplifiers
2010 IEEE MTT-S International Microwave Symposium
◽
10.1109/mwsym.2010.5517652
◽
2010
◽
Author(s):
Reinel Marante
◽
Jose A. Garcia
◽
Lorena Cabria
◽
Theophile Aballo
◽
Pedro M. Cabral
◽
...
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
◽
Characterization Techniques
◽
Nonlinear Characterization
◽
Model Predictions
◽
Improving Accuracy
Download Full-text
Linearity Improvement of GaN HEMT for RF Power Amplifiers
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
◽
10.1109/csics.2013.6659235
◽
2013
◽
Cited By ~ 4
Author(s):
Kazutaka Inoue
◽
Hiroshi Yamamoto
◽
Ken Nakata
◽
Fumio Yamada
◽
Takashi Yamamoto
◽
...
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
◽
Linearity Improvement
Download Full-text
Nonlinear characterization techniques for improving accuracy of GaN HEMT model predictions in RF power amplifiers
2010 IEEE MTT-S International Microwave Symposium
◽
10.1109/mwsym.2010.5515568
◽
2010
◽
Author(s):
R. Marante
◽
J. A. Garcia
◽
L. Cabria
◽
T. Aballo
◽
P. Cabral
◽
...
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
◽
Characterization Techniques
◽
Nonlinear Characterization
◽
Model Predictions
◽
Improving Accuracy
Download Full-text
AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers
IEEE Transactions on Microwave Theory and Techniques
◽
10.1109/tmtt.2014.2305806
◽
2014
◽
Vol 62
(4)
◽
pp. 799-809
◽
Cited By ~ 40
Author(s):
Luis Cotimos Nunes
◽
Pedro M. Cabral
◽
Jose C. Pedro
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Gan Hemt
◽
Generation Mechanisms
Download Full-text
BEHAVIORAL MODELING OF RF POWER AMPLIFIERS WITH MEMORY EFFECTS USING ORTHONORMAL HERMITE POLYNOMIAL BASIS NEURAL NETWORK
Progress In Electromagnetics Research C
◽
10.2528/pierc12091903
◽
2013
◽
Vol 34
◽
pp. 239-251
◽
Cited By ~ 3
Author(s):
Xiao-Hui Yuan
◽
Quanyuan Feng
Keyword(s):
Neural Network
◽
Power Amplifiers
◽
Hermite Polynomial
◽
Memory Effects
◽
Behavioral Modeling
◽
Polynomial Basis
◽
Rf Power Amplifiers
◽
Rf Power
◽
With Memory
Download Full-text
A CMOS Envelope Tracking Supply Convertor for RF Power Amplifiers of 5G NR Mobile Terminals
IEEE Transactions on Power Electronics
◽
10.1109/tpel.2020.3039786
◽
2020
◽
pp. 1-1
Author(s):
Yu-Chen Lin
◽
Yi-Jan Emery Chen
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Envelope Tracking
◽
Mobile Terminals
Download Full-text
Adaptive Digital Predistortion of RF Power Amplifiers Based on Memory Polynomial Model and Indirect Learning Architecture
2020 International Conference Engineering and Telecommunication (En&T)
◽
10.1109/ent50437.2020.9431300
◽
2020
◽
Author(s):
Van-Kien Vu
◽
Van-Nghia Tran
Keyword(s):
Power Amplifiers
◽
Polynomial Model
◽
Rf Power Amplifiers
◽
Digital Predistortion
◽
Rf Power
◽
Memory Polynomial
Download Full-text
33.9 A Hybrid Switching Supply Modulator Achieving 130MHz Envelope-Tracking Bandwidth and 10W Output Power for 2G/3G/LTE/NR RF Power Amplifiers
2021 IEEE International Solid- State Circuits Conference (ISSCC)
◽
10.1109/isscc42613.2021.9365986
◽
2021
◽
Author(s):
Dongsu Kim
◽
Jun-Suk Bang
◽
Jongbeom Baek
◽
Seungchan Park
◽
Young-Ho Jung
◽
...
Keyword(s):
Output Power
◽
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Envelope Tracking
◽
Switching Supply
◽
Hybrid Switching
Download Full-text
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