This paper investigates an RF MEMS (Radio Frequency Micro Electro-Mechanical System) switch from DC to 5.8 GHz switching, for use in mobile communications systems and devices. The RF MEMS switch uses a novel seesaw design to create a Double-Pole Double-Throw (DPDT) Switch which increases the capabilities of the seesaw design structure. A low Switching supply voltage with high RF isolation was achieved during its development. After looking at other available seesaw designs, it was discovered that an improvement could be attained by adding additional contacts.
An improved concept over existing Single-Pole Single-Throw (SPST) seesaw switches was achieved by using a DPDT switch with a set of upper and lower contacts at each side of the seesaw. To conform to the Microscale, from 1 μm – 100 μm, a length of 41μm was chosen to provide an adequate size for fabrication.
Copper Bulk General (Cu) was chosen for the pivot material due to its good electrical conductivity and sufficient flexibility for elastic recovery.
A working simulation was achieved without compromising the ‘Air-Gap’ between the contacts, which retains high isolation when the switch is open-circuited. The electrostatic supply voltage has been significantly reduced to a value which is closer to that used in mobile devices.
SIMULATION OF SWITCHING SUPPLY POWER OF INCREASED POWER FOR LIGHT EMITTING DIODES CONTROL