scholarly journals X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs

2017 ◽  
Vol 12 (2) ◽  
pp. 179-184 ◽  
Author(s):  
Wooseok Lee ◽  
Hwiseob Lee ◽  
Hyunuk Kang ◽  
Wonseob Lim ◽  
Jaekyung Han ◽  
...  
Frequenz ◽  
2014 ◽  
Vol 68 (9-10) ◽  
Author(s):  
Erhan Ersoy ◽  
Serguei Chevtchenko ◽  
Paul Kurpas ◽  
Wolfgang Heinrich

AbstractWhile the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.


Author(s):  
Paolo Colantonio ◽  
Franco Giannini ◽  
Rocco Giofre ◽  
Ernesto Limiti ◽  
Luca Piazzon

2016 ◽  
Vol 52 (15) ◽  
pp. 1342-1343 ◽  
Author(s):  
S.‐Y. Lee ◽  
J. Woo ◽  
S. Park ◽  
Y. Kwon

Author(s):  
Wooseok Lee ◽  
Hwiseob Lee ◽  
Seungkuk Park ◽  
Wonseob Lim ◽  
Jaekyoung Han ◽  
...  
Keyword(s):  
Gan Hemt ◽  

2011 ◽  
Vol 53 (11) ◽  
pp. 2665-2668 ◽  
Author(s):  
P. Colantonio ◽  
F. Giannini ◽  
R. Giofrè ◽  
L. Piazzon

2018 ◽  
Vol 28 (1) ◽  
pp. 40-42 ◽  
Author(s):  
Muhammad Saad Khan ◽  
Hongxin Zhang ◽  
Xueli Wang ◽  
Rahat Ullah ◽  
Ibrar Ahmad ◽  
...  

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