Lifetime modeling and prediction of power devices

Reliability of Power Electronic Converter Systems ◽

10.1049/pbpo080e_ch9 ◽

2016 ◽

pp. 223-244

Author(s):

Keyword(s):

Power Devices ◽

Modeling And Prediction

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Artificial Neural Network-Based (ANN) Approach for Characteristics Modeling and Prediction in GaN-on-Si Power Devices

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170110 ◽

2020 ◽

Author(s):

Sayeem Bin Kutub ◽

Hong-Jia Jiang ◽

Nan-Yow Chen ◽

Wen-Jay Lee ◽

Chia-Yung Jui ◽

...

Keyword(s):

Neural Network ◽

Artificial Neural Network ◽

Power Devices ◽

Modeling And Prediction ◽

Artificial Neural ◽

Gan On Si

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Statistical Modeling and Prediction of Quarterly Overhead Costs

The Journal of Cost Analysis ◽

10.1080/08823871.1991.10462386 ◽

1991 ◽

Vol 8 (1) ◽

pp. 63-76

Author(s):

Dan C. Boger

Keyword(s):

Statistical Modeling ◽

Modeling And Prediction

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Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.1015 ◽

2019 ◽

Vol 139 (9) ◽

pp. 1015-1019

Author(s):

Tomoyoshi Kushida ◽

Hiroyuki Sakaki

Keyword(s):

Power Devices

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International Standardization on Superconducting Power Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.134.558 ◽

2014 ◽

Vol 134 (8) ◽

pp. 558-559

Author(s):

Koki TSUNODA ◽

Teruo MATSUSHITA

Keyword(s):

Power Devices ◽

International Standardization

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Forest growth modeling and prediction (Volumes 1 & 2).

10.2737/nc-gtr-120 ◽

1988 ◽

Author(s):

Alan R. Ek ◽

Stephen R. Shifley ◽

Thomas E. Burk

Keyword(s):

Growth Modeling ◽

Forest Growth ◽

Modeling And Prediction

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30366380 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30351626 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30382425u ◽

2020 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Defect engineering in SiC technology for high-voltage power devices

Applied Physics Express ◽

10.35848/1882-0786/abc787 ◽

2020 ◽

Vol 13 (12) ◽

pp. 120101

Author(s):

Tsunenobu Kimoto ◽

Heiji Watanabe

Keyword(s):

High Voltage ◽

Defect Engineering ◽

Power Devices

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Modeling and Prediction of Space/Time Natural Processes Using A Bayesian Maximum Entropy

10.21236/ada424350 ◽

2003 ◽

Author(s):

George Christakos ◽

Marc Serre

Keyword(s):

Maximum Entropy ◽

Space Time ◽

Bayesian Maximum Entropy ◽

Natural Processes ◽

Modeling And Prediction

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