GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.

Наш вектор развития – выпуск востребованной конкурентоспособной продукции

АО "Зеленоградский нанотехнологический центр" (АО "ЗНТЦ") – предприятие, которое не только активно развивает непростое направление микроэлектронного производства, но и стремится соответствовать в этом самым передовым тенденциям, выстраивая кооперацию с ведущими отечественными вузами и предприятиями для создания полноценных цепочек от разработки ЭКБ до создания аппаратуры с ее использованием. В уходящем году компания проделала большую работу сразу по нескольким направлениям. Это сборка полупроводниковых приборов и интегральных схем, производство электронной компонентной базы по технологии нитрид галлия на кремнии и интегральная фотоника. О достигнутых результатах и наиболее перспективных областях, в которых развивается Зеленоградский наноцентр, рассказывает генеральный директор АО "ЗНТЦ" Анатолий Андреевич Ковалев. The Zelenograd Nanotechnology Center JSC (ZNTC JSC) develops microelectronics manufacturing and also strives to stay inline with the most advanced trends in this matter by arranging cooperation with leading Russian universities. ZNTC implements comprehensive flow from electronic components design to equipment creation based on these components. In this year, the company has reached a new level in semiconductor assembly, GaN-on-Si and integrated photonics manufacturing. Anatoly Kovalev, CEO of ZNTC JSC, tells about the achievements and the most promising growth lines of the company.

GaN power IC normally-on and normally-off transistors technology and simulation

GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability. This paper demonstrates technology of GaN-on-Si normally-on and normally-off transistor with different p-GaN cap-layer thickness as well as simulation of these devices. The simulation data confirm experimental results. P-GaN cap-layer thickness affects the current channel density: the more p-GaN thickness, the less channel density. The fabricated transistors have a maximum drain current in open state of about 800 mA/mm.

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.