2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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9781728148366
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Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 ◽  
Author(s):  
Young-Joon Park ◽  
Jungwoo Joh ◽  
Jayhoon Chung ◽  
Srikanth Krishnan
Keyword(s):  
Power Device ◽  
Device Application ◽  
Cu Interconnect

Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests

2020 ◽  
Author(s):  
Jiahui Sun ◽  
Jin Wei ◽  
Zheyang Zheng ◽  
Gang Lyu ◽  
Kevin J. Chen
Keyword(s):  
Short Circuit

A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

2020 ◽  
Author(s):  
Tomoyuki Miyoshi ◽  
Hiroshi Suzuki ◽  
Tomoyasu Furukawa ◽  
So Watanabe ◽  
Masaki Shiraishi ◽  
...  
Keyword(s):  
Power Device

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

2020 ◽  
Author(s):  
Jiabei He ◽  
Jin Wei ◽  
Zheyang Zheng ◽  
Song Yang ◽  
Yang Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Type

A High-Voltage Transients Suppressor Diode

2020 ◽  
Author(s):  
M. Beninger-Bina ◽  
T. Basler ◽  
M. Dainese ◽  
H.-J. Schulze
Keyword(s):  
High Voltage ◽  
Voltage Transients

Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

2020 ◽  
Author(s):  
M. S. Zaman ◽  
W. L. Jiang ◽  
S. Murray ◽  
H. De Vleeschouwer ◽  
P. Moens ◽  
...  
Keyword(s):  
Gate Driver ◽  
Gan On Si
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