2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

158

(FIVE YEARS 158)

H-INDEX

1

(FIVE YEARS 1)

Published By IEEE

9781728148366

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170112 ◽

2020 ◽

Author(s):

Young-Joon Park ◽

Jungwoo Joh ◽

Jayhoon Chung ◽

Srikanth Krishnan

Keyword(s):

Power Device ◽

Device Application ◽

Cu Interconnect

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ISPSD 2020 Author Index

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170109 ◽

2020 ◽

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Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170148 ◽

2020 ◽

Author(s):

Jiahui Sun ◽

Jin Wei ◽

Zheyang Zheng ◽

Gang Lyu ◽

Kevin J. Chen

Keyword(s):

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A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170159 ◽

2020 ◽

Author(s):

Tomoyuki Miyoshi ◽

Hiroshi Suzuki ◽

Tomoyasu Furukawa ◽

So Watanabe ◽

Masaki Shiraishi ◽

...

Keyword(s):

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Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170191 ◽

2020 ◽

Author(s):

Jiabei He ◽

Jin Wei ◽

Zheyang Zheng ◽

Song Yang ◽

Yang Li ◽

...

Keyword(s):

Low Temperature ◽

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A High-Voltage Transients Suppressor Diode

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170169 ◽

2020 ◽

Author(s):

M. Beninger-Bina ◽

T. Basler ◽

M. Dainese ◽

H.-J. Schulze

Keyword(s):

High Voltage ◽

Voltage Transients

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Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170043 ◽

2020 ◽

Author(s):

Junting Chen ◽

Mengyuan Hua ◽

Jiali Jiang ◽

Jiabei He ◽

Jin Wei ◽

...

Keyword(s):

Threshold Voltage ◽

Voltage Stability ◽

Reverse Bias ◽

Charge Trapping ◽

Bias Stress ◽

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Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170100 ◽

2020 ◽

Author(s):

M. S. Zaman ◽

W. L. Jiang ◽

S. Murray ◽

H. De Vleeschouwer ◽

P. Moens ◽

...

Keyword(s):

Gate Driver ◽

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A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170123 ◽

2020 ◽

Author(s):

Takahiro Mori ◽

Tomonari Yamaguchi ◽

Takeshi Kamino ◽

Junji Tsuruta ◽

Mototsugu Okushima ◽

...

Keyword(s):

Rise Time ◽

Current Increase ◽

Pulse Rise Time ◽

State Breakdown ◽

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Tools for Broadband Electromagnetic Modeling of Power Semiconductor Packages and External Circuit Layouts

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd46842.2020.9170161 ◽

2020 ◽

Author(s):

Ivana Kovacevic-Badstuebner ◽

Ulrike Grossner ◽

Dan Popescu

Keyword(s):

External Circuit ◽

Electromagnetic Modeling ◽

Power Semiconductor ◽

Semiconductor Packages

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