High efficiency GaN-based LEDs: light extraction by photonic crystals

2006 ◽  
Vol 31 (6) ◽  
pp. 1-235 ◽  
Author(s):  
A. David
2003 ◽  
Author(s):  
Volker Haerle ◽  
Berthold Hahn ◽  
Stephan Kaiser ◽  
Andreas Weimar ◽  
Dominik Eisert ◽  
...  

2011 ◽  
Vol 98 (25) ◽  
pp. 251112 ◽  
Author(s):  
Elison Matioli ◽  
Stuart Brinkley ◽  
Kathryn M. Kelchner ◽  
Shuji Nakamura ◽  
Steven DenBaars ◽  
...  

2007 ◽  
Author(s):  
A. M. Adawi ◽  
M. Roberts ◽  
L. G. Connolly ◽  
R. Kullock ◽  
J. L. Turner ◽  
...  

Author(s):  
Salah Obayya ◽  
Nihal Fayez Fahmy Areed ◽  
Mohamed Farhat O. Hameed ◽  
Mohamed Hussein Abdelrazik

The solar energy is able to supply humanity energy for almost another 1 billion years. Optical nano-antennas (ONAs) are an attractive technology for high efficiency, and low-cost solar cells. These devices can be classified to semiconductor nano-wires and metallic nano-antenna. Extensive studies have been carried out on ONAs to investigate their ability to harvest solar energy. Inspired by these studies, the scope of the chapter is to highlight the latest designs of the two main types of ONAs. The metallic nano-antennas are discussed based on the following points: plasmon, modeling, and performance of antenna designs using different configurations and materials. Moreover, the semiconductor nano-wires are studied thoroughly in terms of photonic crystals, antenna design with different patterns, nano-wire forms and materials. Also, the applications of ONAs and their fabrication aspects such as diode challenges are presented in detail. Finally, three novel designs of ONAs are presented and numerically simulated to maximize the harvesting efficiency.


Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.


2008 ◽  
Vol 25 (8) ◽  
pp. 2900-2903 ◽  
Author(s):  
Du Gui-Qiang ◽  
Jiang Hai-tao ◽  
Li Hong -Qiang ◽  
Zhang Ye-Wen ◽  
Chen Hong

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