Probing polaron-induced exciton quenching in TADF based organic light-emitting diodes

Polaron-induced exciton quenching in thermally activated delayed fluorescence (TADF)-based organic light-emitting diodes (OLEDs) can lead to external quantum efficiency (EQE) roll-off and device degradation. In this study, singlet-polaron annihilation (SPA) and triplet-polaron annihilation (TPA) were investigated under steady-state conditions and their relative contributions to EQE roll-off were quantified, using experimentally obtained parameters. It is observed that both TPA and SPA can lead to efficiency roll-off in 2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) doped OLEDs. Charge imbalance and singlet-triplet annihilation (STA) were found to be the main contributing factors, whereas the device degradation process is mainly dominated by TPA. It is also shown that the impact of electric field-induced exciton dissociation is negligible under the DC operation regime (electric field < 0.5 MV cm−1). Through theoretical simulation, it is demonstrated that improvement to the charge recombination rate may reduce the effect of polaron-induced quenching, and thus significantly decrease the EQE roll-off.

Electroplated core–shell nanowire network electrodes for highly efficient organic light-emitting diodes

In this study, we performed metal (Ag, Ni, Cu, or Pd) electroplating of core–shell metallic Ag nanowire (AgNW) networks intended for use as the anode electrode in organic light-emitting diodes (OLEDs) to modify the work function (WF) and conductivity of the AgNW networks. This low-cost and facile electroplating method enabled the precise deposition of metal onto the AgNW surface and at the nanowire (NW) junctions. AgNWs coated onto a transparent glass substrate were immersed in four different metal electroplating baths: those containing AgNO3 for Ag electroplating, NiSO4 for Ni electroplating, Cu2P2O7 for Cu electroplating, and PdCl2 for Pd electroplating. The solvated metal ions (Ag+, Ni2+, Cu2+, and Pd2+) in the respective electroplating baths were reduced to the corresponding metals on the AgNW surface in the galvanostatic mode under a constant electric current achieved by linear sweep voltammetry via an external circuit between the AgNW networks (cathode) and a Pt mesh (anode). The amount of electroplated metal was systematically controlled by varying the electroplating time. Scanning electron microscopy images showed that the four different metals (shells) were successfully electroplated on the AgNWs (core), and the nanosize-controlled electroplating process produced metal NWs with varying diameters, conductivities, optical transmittances, and WFs. The metal-electroplated AgNWs were successfully employed as the anode electrodes of the OLEDs. This facile and low-cost method of metal electroplating of AgNWs to increase their WFs and conductivities is a promising development for the fabrication of next-generation OLEDs.

Deep-Red and Near-Infrared Iridium Complexes with Fine-Tuned Emission Colors by Adjusting Trifluoromethyl Substitution on Cyclometalated Ligands Combined with Matched Ancillary Ligands for Highly Efficient Phosphorescent Organic Light-Emitting Diodes

Six novel Ir(C^N)2(L^X)-type heteroleptic iridium complexes with deep-red and near-infrared region (NIR)-emitting coverage were constructed through the cross matching of various cyclometalating (C^N) and ancillary (LX) ligands. Here, three novel C^N ligands were designed by introducing the electron-withdrawing group CF3 on the ortho (o-), meta (m-), and para (p-) positions of the phenyl ring in the 1-phenylisoquinoline (piq) group, which were combined with two electron-rich LX ligands (dipba and dipg), respectively, leading to subsequent iridium complexes with gradually changing emission colors from deep red (≈660 nm) to NIR (≈700 nm). Moreover, a series of phosphorescent organic light-emitting diodes (PhOLEDs) were fabricated by employing these phosphors as dopant emitters with two doping concentrations, 5% and 10%, respectively. They exhibited efficient electroluminescence (EL) with significantly high EQE values: >15.0% for deep red light0 (λmax = 664 nm) and >4.0% for NIR cases (λmax = 704 nm) at a high luminance level of 100 cd m−2. This work not only provides a promising approach for finely tuning the emission color of red phosphors via the easily accessible molecular design strategy, but also enables the establishment of an effective method for enriching phosphorescent-emitting molecules for practical applications, especially in the deep-red and near-infrared region (NIR).