I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-21-Pr3-24
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
Electron Velocity ◽  
Small Signal ◽  
Velocity Overshoot ◽  
Signal Parameters

scholarly journals Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-13-C3-18
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
Electron Velocity ◽  
Gate Length ◽  
Velocity Overshoot

Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe

1998 ◽  
Author(s):  
Kong-Thon F. Tsen ◽  
David K. Ferry ◽  
Jyh-Shyang Wang ◽  
Chao-Hsiung Huang ◽  
Hao-Hsiung Lin
Keyword(s):  
Direct Observation ◽  
Electron Velocity ◽  
Velocity Overshoot ◽  
Raman Probe

Subpicosecond Raman Studies of Electron Velocity Overshoot in a GaAs-Based Nanostructure Semiconductor

1996 ◽  
pp. 501-504
Author(s):  
E. D. Grann ◽  
K. T. Tsen ◽  
D. K. Ferry ◽  
A. Salvador ◽  
A. Botcharev ◽  
...  
Keyword(s):  
Electron Velocity ◽  
Velocity Overshoot
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