RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

ANOMALOUS ANISOTROPY OF RESONANT RAMAN SCATTERING IN OPEN ZnCdSe/ZnSe NANOWIRES

2003 ◽  
Vol 02 (06) ◽  
pp. 479-485
Author(s):  
V. H. KAIBYSHEV ◽  
V. V. TRAVNIKOV
Keyword(s):  
Raman Scattering ◽  
Phonon Interaction ◽  
Photon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Znse Nanowires

Anomalous strong linear anisotropy of resonant Raman scattering in open ZnCdSe / ZnSe nanowires has been found. The anisotropy value is more than twice as that due to the anisotropy of exciton–photon interaction which is the characteristic for open nanowires. It is suggested that the anomalous anisotropy is connected with different probability of Frohlich exciton–LO phonon interaction at scattering via transverse and longitudinal exciton states.

Triply resonant Raman scattering via nonequilibrium phonons in GaAs quantum wells

1992 ◽  
Vol 45 (12) ◽  
pp. 6769-6775 ◽  
Author(s):  
Y. Liu ◽  
R. Sooryakumar ◽  
Emil S. Koteles ◽  
B. Elman
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering mediated by excitons in CdTe/CdZnTe multiple quantum wells

1992 ◽  
Vol 53 (1-6) ◽  
pp. 348-350
Author(s):  
Y. Garini ◽  
H. Tuffigo ◽  
I. Brener ◽  
E. Cohen ◽  
N. Magnea ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Influence of the exciton lifetime on resonant Raman scattering in quantum wells

1992 ◽  
Vol 46 (16) ◽  
pp. 10490-10493 ◽  
Author(s):  
A. J. Shields ◽  
M. Cardona ◽  
R. Nötzel ◽  
K. Ploog
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Exciton Lifetime ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering in GaAs/AlAs quantum wells

1992 ◽  
Vol 7 (3) ◽  
pp. 379-384 ◽  
Author(s):  
W Hayes ◽  
R Springett ◽  
M S Skolnick ◽  
G W Smith ◽  
C R Whitehouse
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

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