High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser

1988 ◽  
Vol 53 (24) ◽  
pp. 2371-2373 ◽  
Author(s):  
D. P. Bour ◽  
D. B. Gilbert ◽  
L. Elbaum ◽  
M. G. Harvey
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

1991 ◽  
Vol 27 (8) ◽  
pp. 661 ◽  
Author(s):  
H. Hamada ◽  
M. Shono ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Matsukawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation ◽  
Current Blocking

High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier

1993 ◽  
Vol 29 (11) ◽  
pp. 1010-1011 ◽  
Author(s):  
M. Shono ◽  
S. Honda ◽  
T. Ikegami ◽  
Y. Bessyo ◽  
R. Hiroyama ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation ◽  
Multiquantum Well

High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes

1987 ◽  
Author(s):  
Masayuki ISHIKAWA ◽  
Kazuhiko ITAYA ◽  
Yukio WATANABE ◽  
Gen-ichi HATAKOSHI ◽  
Hideto SUGAWARA ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation
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