High-Power Operation of Strained GaInP/AIGaInP Quantum Well Laser Diodes Grown by Solid Source Molecular Beam Epitaxy

2005 ◽  
Author(s):  
M. Toivonen ◽  
P. Savolainen ◽  
S. Orsila ◽  
M. Dumitrescu ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

1993 ◽  
Vol 63 (13) ◽  
pp. 1718-1720 ◽  
Author(s):  
T. Hayakawa ◽  
K. Matsumoto ◽  
M. Morishima ◽  
M. Nagai ◽  
H. Horie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Well Laser ◽  
Nm Range

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well
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