Separate‐confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

1993 ◽  
Vol 63 (22) ◽  
pp. 2996-2998 ◽  
Author(s):  
Tetsufumi Odagawa ◽  
Kaoru Nakajima ◽  
Kazuhiro Tanaka ◽  
Hiroyuki Nobuhara ◽  
Tadao Inoue ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Recombination Coefficient ◽  
Multiple Quantum ◽  
Carrier Recombination ◽  
Effective Carrier

Recombination mechanisms in photopumped Zn1−xCdxSe/ZnSe multiple quantum well lasers

1995 ◽  
Vol 150 ◽  
pp. 712-717 ◽  
Author(s):  
L. Calcagnile ◽  
M. Di Dio, ◽  
M. Lomascolo ◽  
R. Rinaldi ◽  
P. Prete ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um

1997 ◽  
Author(s):  
Alexei N. Baranov ◽  
Y. Cuminal ◽  
N. Bertru ◽  
Claude L. Alibert ◽  
Andre F. Joullie
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

2000 ◽  
Vol 15 (12) ◽  
pp. 1131-1140 ◽  
Author(s):  
L V Asryan ◽  
N A Gun'ko ◽  
A S Polkovnikov ◽  
G G Zegrya ◽  
R A Suris ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum
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