Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Discovery of a Highly Conserved Peptide in the Iron Transporter Melanotransferrin that Traverses an Intact Blood Brain Barrier and Localized in Neural Cells

The blood-brain barrier (BBB) hinders the distribution of therapeutics intended for treatment of diseases of the brain. Our previous studies demonstrated that that a soluble form of melanotransferrin (MTf; Uniprot P08582; also known as p97, MFI2, and CD228), a mammalian iron-transport protein, is an effective carrier for delivery of drug conjugates across the BBB into the brain and was the first BBB targeting delivery system to demonstrate therapeutic efficacy within the brain. Here, we performed a screen to identify peptides from MTf capable of traversing the BBB. We identified a highly conserved 12-amino acid peptide, termed MTfp, that retains the ability to cross the intact BBB intact, distributes throughout the parenchyma, and enter endosomes and lysosomes within neurons, astrocytes and microglia in the brain. This peptide may provide a platform for the transport of therapeutics to the CNS, and thereby offers new avenues for potential treatments of neuropathologies that are currently refractory to existing therapies.

Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric

A solution processed top-contact bottom gated SnO2 thin-film transistor (TFT) has been fabricated by using a TiO2/ Li-Al2O3 bilayer stacked gate dielectric that show operating voltage of this TFT within 2.0 V. It is observed that the bilayer dielectric has much higher areal capacitance with lower leakage current density that significantly improve the overall device performance of TFT. The TFT with bilayer gate dielectric shows an effective carrier mobility (µsat) of 9.2 cm2V− 1s− 1 with an on/off ratio of 7.1x103 which are significantly higher with respect to the TFT with a single layer Li-Al2O3 gate dielectric. The origin of this improvement is due to the Schottky junction between the highly doped silicon (p++-Si) and TiO2 of bilayer stacked dielectric that induced electrons to the channel which reduces the dielectric/semiconductor interface trap state. This investigation opens a new path to develop TFT device performance using a suitable bilayer stack of gate-dielectric.